SMAZ5935B-M3/5A Allicdata Electronics
Allicdata Part #:

SMAZ5935B-M3/5A-ND

Manufacturer Part#:

SMAZ5935B-M3/5A

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 27V 500MW DO214AC
More Detail: Zener Diode 27V 500mW ±5% Surface Mount DO-214AC
DataSheet: SMAZ5935B-M3/5A datasheetSMAZ5935B-M3/5A Datasheet/PDF
Quantity: 1000
7500 +: $ 0.06665
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 27V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 23 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 20.6V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC
Description

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Diodes - Zener - Single

The SMAZ5935B-M3/5A is a high voltage, single junction PN semiconductor with a maximum reverse breakdown voltage rating of 5.6V. This device is particularly suited for use as a voltage reference for voltage regulator, voltage limiter, or protection diode circuits. It can also be used in switching regulator applications, temperature controlled circuits and similar applications where a low cost, reliable and stable voltage reference is desired.

Application Field

SMAZ5935B-M3/5A is commonly used in many applications such as voltage regulators, noise and transient suppression, for logic level and bus interfacing, as a reference voltage source, as a voltage limiter, and to protect against reverse polarity current. Its low noise and low temperature coefficient makes it suitable for use in temperature controlled circuits, over-voltage protection, medical equipment, and in laser diode drivers. It is also used in switching regulators, voltage converters and other DC/DC converters, power supplies, RF and microwave transmitters, military systems, and test and measurement equipment.

Working Principle

The working principle of the SMAZ5935B-M3/5A is based on the PN semiconductor junction, which is created by doping oppositely charged N and P type materials into a single crystal. This creates a region of charge separation, where electron and hole clouds repel each other, creating a depletion region. When a forward bias voltage is applied across the depletion region, the electrons and holes move and form a conductive path. When a reverse bias voltage is applied, the current is blocked from flowing due to the heavily depleted region. The breakdown voltage is the maximum reverse voltage at which a current will flow through the device.

The SMAZ5935B-M3/5A is designed to operate with a breakdown voltage of 5.6V and a maximum peak pulse current of3.5A. This junction temperature is rated at 155℃, providing good temperature stability. Additionally, this zener diode is designed to operate in both A.C. and D.C. resistance measurements.

In conclusion, the SMAZ5935B-M3/5A is a versatile and reliable single junction Zener diode that is suitable for use in a wide range of applications. It features low noise levels, low temperature coefficient and good stability, making it suitable for use in temperature controlled circuits and systems, over-voltage protection, medical equipment and other applications.

The specific data is subject to PDF, and the above content is for reference

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