SMB10J13CAHM4G Allicdata Electronics
Allicdata Part #:

SMB10J13CAHM4G-ND

Manufacturer Part#:

SMB10J13CAHM4G

Price: $ 0.15
Product Category:

Circuit Protection

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TVS DIODE 13V 21.5V DO214AA
More Detail: N/A
DataSheet: SMB10J13CAHM4G datasheetSMB10J13CAHM4G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
6000 +: $ 0.12949
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Voltage - Clamping (Max) @ Ipp: 21.5V
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Current - Peak Pulse (10/1000µs): 46.5A
Series: Automotive, AEC-Q101, SMB10J
Voltage - Breakdown (Min): 14.4V
Voltage - Reverse Standoff (Typ): 13V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes are used to provide overvoltage protection in electrical circuits and systems. Common applications of TVS - Diodes include protecting internal circuitry from electrostatic discharge (ESD), protecting automotive and telecom equipment from lightning and power surges, and protecting computers and mobile phones from power spikes. The SMB10J13CAHM4G is a uni-directional, surface mount, low-capacitance, high-performance TVS diode.

The SMB10J13CAHM4G diode provides ESD protection up to ±15kV contact discharge for both human body model and machine model. It also provides protection against high-energy transient pulses up to 11A peak current, with a working voltage of 13V and a power dissipation rating of 200W. The diode has a low reverse leakage current of 12µA at rated working voltage of 13V. It is designed to be used in a wide range of lower voltage protection circuits for both consumer and industrial applications.

The working principle of the SMB10J13CAHM4G diode is based on the avalanche breakdown of the PN junction that occurs when the voltage across the junction exceeds its reverse breakdown voltage. When this occurs, an avalanche current increases exponentially with a short delay, and the reverse biased PN junction of the diode becomes a conductor, allowing current to flow through the diode. The diode then acts like a short-circuit for the overvoltage pulse, preventing it from travelling through the protected circuit or device.

The SMB10J13CAHM4G diode is suitable for protecting against ESD and transient surge pulses in applications such as consumer electronics, communications equipment, power supplies, and automotive circuits. It can also be used for protecting microcontroller circuits from power transients associated with power distribution lines.

In summary, the SMB10J13CAHM4G diode is a uni-directional, low-capacitance, high-performance TVS diode providing overvoltage protection for a range of lower voltage protection circuits. It is suitable for protecting against ESD and transient surge pulses in consumer electronics, communications equipment, power supplies, and automotive circuits. The diode works by allowing a surge of current to travel through it when the voltage across the PN junction exceeds its reverse breakdown voltage, thereby acting like a short-circuit and preventing the surge from travelling through the circuit or device.

The specific data is subject to PDF, and the above content is for reference

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