Allicdata Part #: | SMB10J13HE3/5B-ND |
Manufacturer Part#: |
SMB10J13HE3/5B |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 13V 23.8V DO214AA |
More Detail: | N/A |
DataSheet: | SMB10J13HE3/5B Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Current - Peak Pulse (10/1000µs): | 42A |
Base Part Number: | SMB10J |
Supplier Device Package: | DO-214AA (SMB) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 1000W (1kW) |
Series: | Automotive, AEC-Q101, TransZorb® |
Voltage - Clamping (Max) @ Ipp: | 23.8V |
Voltage - Breakdown (Min): | 14.4V |
Voltage - Reverse Standoff (Typ): | 13V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The SMB10J13HE3/5B is a TVS - Diode rated at 12A, 500W and 5V. It is often used in applications that require high-performance, high voltage protection from voltage transients, and is specifically designed for protecting against electrostatic discharge (ESD). This device has an excellent clamping voltage over-voltage and a very fast response time, making it ideal for use in high-speed data transmission applications.
The electrical construction of the SMB10J13HE3/5B is such that it has an N-channel junction semiconductor field-effect transistor (FET) as its main component. The FET is a voltage-sensitive device, meaning that it enables the current through the device to be backed up whenever the voltage across the device rises. The rate of rise of the voltage is determined by the slope of the device\'s I-V (current-voltage) characteristic curve. This device also has an integrated protection diode, which serves to counteract any transient spikes in voltage.
The SMB10J13HE3/5B uses a patented L4Z (Field Effect Transistor with Integrated Protection Diode) integrated protection structure, which greatly improves its ESD performance. The L4Z FET protection structure ensures that the device can withstand both constant and transient voltage surges. It also allows for improved thermal-stability and reliability, as well as faster response time.
In terms of its application field, the SMB10J13HE3/5B is mainly used to protect downstream circuits from voltage transients, such as lightning strikes and electrostatic discharges (ESD). It is often used for high-speed data transmission applications, where it can adequately protect the devices from transient voltage spikes. Other applications include automotive, consumer electronics, industrial power supplies, and telecom/networking applications.
The working principle of the SMB10J13HE3/5B is based on the FET\'s I-V characteristic curve and its integrated diode protection structure. The FET is used to back up the current through the device whenever the voltage across the device rises. The diode is used to suppress any transient spikes in voltage, ensuring that the downstream circuits are safe from the transient voltages.
Overall, the SMB10J13HE3/5B is an excellent choice for protecting downstream circuits from voltage transients. It has a fast response time and an excellent clamping voltage over-voltage, making it well-suited for high-speed data transmission applications. The integrated protection diode ensures that the device can withstand both constant and transient voltage surges, making it a great choice for automotive, consumer electronics, industrial power supplies, and telecom/networking applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SMB10J14A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 14V 23.2V DO214... |
SMB10J20A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 20V 32.4V DO214... |
SMB10J24A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 24V 38.9V DO214... |
SMB10J26A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 26V 42.1V DO214... |
SMB10J30A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 30V 48.4V DO214... |
SMB10J18A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 18V 29.2V DO214... |
SMB10J12A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 12V 19.9V DO214... |
SMB10J15A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 15V 24.4V DO214... |
SMB10J28A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 28V 45.4V DO214... |
SMB10J18AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 18V 29.2V DO214... |
SMB10J22AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 22V 35.5V DO214... |
SMB10J13AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 13V 21.5V DO214... |
SMB10J12AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 12V 19.9V DO214... |
SMB10J33AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 33V 53.3V DO214... |
SMB10J28AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 28V 45.4V DO214... |
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SMB10J11A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
SMB10J12A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
SMB10J13A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
SMB10J14A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
SMB10J15A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
SMB10J16A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 16V 26V DO214AA |
SMB10J17A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
SMB10J18A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
SMB10J20A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
SMB10J22A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
SMB10J24A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
SMB10J26A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
SMB10J28A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 28V 45.4V DO214... |
SMB10J30A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
SMB10J33A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
SMB10J36A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 36V 58.1V DO214... |
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