SMB10J18-E3/5B Allicdata Electronics
Allicdata Part #:

SMB10J18-E3/5B-ND

Manufacturer Part#:

SMB10J18-E3/5B

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 18V 32.2V DO214AA
More Detail: N/A
DataSheet: SMB10J18-E3/5B datasheetSMB10J18-E3/5B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Pulse (10/1000µs): 31.1A
Base Part Number: SMB10J
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Series: TransZorb®
Voltage - Clamping (Max) @ Ipp: 32.2V
Voltage - Breakdown (Min): 20V
Voltage - Reverse Standoff (Typ): 18V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (transient voltage suppressor) diodes protect against voltage transients that are significantly higher than normal working levels. SMB10J18-E3/5B is one of such TVS diode, and it can be used in various applications to guard against transient threats. This article will introduce the application field and working principle of SMB10J18-E3/5B.

SMB10J18-E3/5B is a low capacitance bidirectional TVS diode that is ideal for ESD and surge protection. It features 10V reverse stand-off voltage, an ultra-low leakage current of 5nA and fast response time of less than 1ps. The device has a reverse blocking voltage of 18V and a peak pulse power dissipation of 600W.

The maximum surge current capability of SMB10J18-E3/5B is 10A. This makes it suitable for many different applications such as data and signal lines, consumer electronics, telecommunication systems, high-performance computing devices, automotive circuitry and many more. Furthermore, it can be designs to house one pair or two pairs of TVS to cover a variety of voltage protection combinations, and the small, low-profile package and its RoHS-compliant make it ideal for a large variety of electronic systems.

The working principle of SMB10J18-E3/5B is based on the PN-junction. When the voltage across the device exceeds the reverse breakdown voltage, avalanching begins, which results in a rapid increase in current and voltage breakdown. The device is designed to absorb transient pulses and dissipate them as heat. The avalanche current is limited by the internal components of the diode, ensuring its protection from over-current.

The PN-junction in SMB10J18-E3/5B can be found with the active terminated technology, which provides excellent performance during high-energy fastest waveforms. This technology also enables the device to have very low dynamic resistance with minimum capacitance, leading to higher levels of electrostatic discharge (ESD) protection.

In addition, SMB10J18-E3/5B is also equipped with a dual parallel- array malfunction protection which helps to protect against dangerous currents creating by improper connection. This allows the device to be used in a wide variety of applications with a higher level of reliability.

To sum up, SMB10J18-E3/5B is a high-performance TVS diode that can be used in many different applications. It has low leakage current, fast response time, ultra-low dynamic resistance with high ESD protection and dual malfunction protection. This makes the SMB10J18-E3/5B the ideal solution for protecting a wide range of electronic systems from transient voltage spikes.

The specific data is subject to PDF, and the above content is for reference

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