SMB10J33-E3/5B Allicdata Electronics
Allicdata Part #:

SMB10J33-E3/5B-ND

Manufacturer Part#:

SMB10J33-E3/5B

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 33V 59V DO214AA
More Detail: N/A
DataSheet: SMB10J33-E3/5B datasheetSMB10J33-E3/5B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Pulse (10/1000µs): 16.9A
Base Part Number: SMB10J
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Series: TransZorb®
Voltage - Clamping (Max) @ Ipp: 59V
Voltage - Breakdown (Min): 36.7V
Voltage - Reverse Standoff (Typ): 33V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS diodes, also known as transient voltage suppression diodes, are one of the most popular solutions for mitigating surge-related electrical noises that can damage computers, electronics, and other valuable equipment. The SMB10J33-E3/5B is a type of schematic symbol for a surface mount metal-oxide-semiconductor TVS diode designed to protect high-speed digital circuits from electrostatic discharge (ESD) and alternating current (AC) transients. The TVS diode acts like an over-current fuse, wherein it stops the flow of electricity when the voltage or current exceeds the designed operating limits.

The SMB10J33-E3/5B has a reverse standoff voltage of 10 V, making it ideal for low voltage and low power applications. It also offers an incredibly low dynamic capacitance (1.8 pF maximum) which helps preserve signal integrity in high-speed designs. Furthermore, the TVS diode can handle peak working power up to 500 watts and has a peak pulse power rating of 1.5 kV.

The SMB10J33-E3/5B is an unidirectional diode that consists of a barrier layer and a metal oxide semiconductor layer between the anode and cathode terminals. When the voltage at the anode terminal exceeds the breakdown voltage of the barrier layer, the depletion region of the metal oxide semiconductor layer begins to form and limits the current flow in the diode. This process prevents further voltage increases and, thus, protects other devices connected to the diode. The SMB10J33-E3/5B is also able to provide a low resistance path when the anode to cathode voltage increases above the breakdown voltage.

The SMB10J33-E3/5B TVS diode is very popular and suitable for numerous applications. Its fast start up time and low capacitance makes this diode best suited for high speed designs like high frequency data converters, bus and signal transceivers, and switch mode power supplies. Furthermore, this type of diode can also be used in circuits in which over-voltage protection is needed, such as in automotive applications, industrial controls, and thermocouple compensation circuits.

In conclusion, the SMB10J33-E3/5B is a type of TVS diode specifically designed to protect high-speed digital circuits from ESD and other electrostatic surges by clamping and limiting the voltage and current. With its low standby current draw, fast start-up time, and low capacitance, the SMB10J33-E3/5B is an ideal choice for projects which require reliable high-speed protection. This diode has numerous applications in various industries, including automotive, industrial controls, data processing, and thermocouple compensation.

The specific data is subject to PDF, and the above content is for reference

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