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TVS - Diodes

A transient voltage protection device is used in a wide range of electrical system applications. Transient Voltage Suppressors (TVS) devices are one type of these devices, employed to protect sensitive circuits from spikes in voltage that can permanently damage or even destroy them. TVS diodes and silicon protective elements are two of the most common types of protection devices of this sort, with the latter having the advantage of superior power handling capability. The SMB10J18CAHR5G is a TVS device, specifically designed to protect sensitive system components from electrostatic discharges, surges, and other events that could cause overvoltage and short-circuiting.

SMB10J18CAHR5G Application Field

The SMB10J18CAHR5G belongs to the class of bidirectional TVS diodes specifically designed to protect against low level electrostatic discharge events (ESD) and electrical overstress. Such protection is required for sensitive components like integrated circuits, transistors, FETs, LEDs, and other such items that can be damaged by an unexpected overvoltage event. The device is intended to be used in communications applications, particularly networking, as the device is designed to protect against overvoltage and electrostatic discharges originating from the RJ45 connector.

SMB10J18CAHR5G Working Principle

The working principle of a TVS diode is based on the concept of avalanche breakdown. Avalanche breakdown occurs when an electric field of sufficient strength is applied across a material, at which point the band gap of that material is filled with additional electrons. This process is reversed when the electric field is removed, at which point the additional electrons are removed and the original material structure is restored. When applied voltage exceeds the rated voltage, the diode enters the avalanche breakdown state, allowing current to pass, thus protecting the underlying circuit and its components from damage due to overvoltage.

Benefits of SMB10J18CAHR5G

The SMB10J18CAHR5G provides various benefits to users, designed exclusively for protection against disruptive electrical events. The device offers a very low on-state resistance when compared to traditional Zener diodes, allowing it to absorb a very high current without causing damage to the underlying circuit. Additionally, the device is capable of operating with a low reverse leakage current, which further adds to its protection capabilities, as a low reverse leakage current allows it to quickly return the underlying circuit back to its normal voltage level, thus preventing further damage from occurring.

Conclusion

In conclusion, the SMB10J18CAHR5G is a TVS diode intended for use in low level electrostatic discharge and electrical overstress applications. The device is specifically designed to protect against transient overvoltage events due to its low on-state resistance and low reverse leakage current. Thus, the device is a suitable choice for protecting sensitive components from disruptions caused by disruptive electrical events.

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