SMBG5353B/TR13

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SMBG5353B/TR13 Application Field and Working Principle

The SMBG5353B/TR13 is a single Zener diode from NXP Semiconductors. It allows for superior power handling and reliable operation in the Zener voltage range. These devices are used in a wide range of applications, including in power supply, circuit protection, and voltage reference circuits.

Features and Benefits

The SMBG5353B/TR13 features a low thermal resistance and a wide operating temperature range from -65° to +175° C. Its high power rating of 8 Watts makes it ideal for applications with demanding power handling requirements. The device also has a low voltage drop of 0.3V at 1A current level and is certified to the Hi-Rel standard MIL-STD-750 and JESD22-A116. These features make it highly reliable and suitable for a range of high power applications.

Applications

The SMBG5353B/TR13 can be used in power supply, circuit protection, and voltage reference applications. It is used in automotive, telecommunications, industrial, and consumer applications to efficiently regulate current, power, and voltage. In automotive applications, the device is used in DC-DC converters, 12V battery protection, and intelligent spark control. In telecommunications, it is used in power interface modules and digital cross-connect systems. In industrial applications, it is used in switch mode power supplies, overvoltage protection, and voltage regulator circuits. In consumer applications, it is used in mobile telephones and other portable electronic devices for power management.

Working Principle

The SMBG5353B/TR13 is a Zener diode that uses the Zener effect to provide a precise reference voltage when properly connected. When the device is forward biased, electrons travel from the n-type material to the p-type material and generate a diode forward biased current. When the diode is reverse biased, the diode has a low reverse bias voltage. However, in the reverse biased mode, electrons can also be injected from the p material to the n material if they exceed a value determined by the Zener breakdown voltage.

When the reverse bias voltage exceeds the Zener breakdown voltage, the electrons injected into the n material cross the depletion region and combine with holes in the p material, thus completing a conductive path. Due to this flow of current, the diode exhibits the Zener effect, allowing a precise reference voltage to be created. The device also has a limit on the amount of current that can flow in the reverse direction, thus protecting the diode from being destroyed.

Conclusion

The SMBG5353B/TR13 from NXP Semiconductor is a single Zener diode that can be used for power handling and reliable operation in the Zener voltage range. It has a wide operating temperature range, low thermal resistance, and high power rating of 8 Watts, making it suitable for a range of demanding applications. It also uses the Zener effect to create a precise reference voltage.

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