SMBG8.0CAHE3/5B Allicdata Electronics

SMBG8.0CAHE3/5B Circuit Protection

Allicdata Part #:

SMBG8.0CAHE3/5B-ND

Manufacturer Part#:

SMBG8.0CAHE3/5B

Price: $ 0.27
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 8V 13.6V DO215AA
More Detail: N/A
DataSheet: SMBG8.0CAHE3/5B datasheetSMBG8.0CAHE3/5B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3200 +: $ 0.24079
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Current - Peak Pulse (10/1000µs): 44.1A
Base Part Number: SMBG
Supplier Device Package: DO-215AA (SMBG)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Clamping (Max) @ Ipp: 13.6V
Voltage - Breakdown (Min): 8.89V
Voltage - Reverse Standoff (Typ): 8V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes

TVS - Diodes are discrete semiconductor devices widely used in the electronics industry to protect high-voltage and high-speed circuits from damage caused by overvoltage transients and electro-static discharge (ESD). The SMBG8.0CAHE3/5B is a TVS - Diode specifically designed to provide robust and reliable protection against these events for various applications.

Application Field

SMBG8.0CAHE3/5B TVS - Diodes are typically used in a range of high-speed circuits requiring surge and ESD protection, including shift registers, analog-to-digital converters, 68000 microprocessors, and other sensitive devices. They are also suitable for use in automotive and aerospace applications, as well as in industrial, telecommunications, and consumer applications.

Working Principle

The working principle behind the SMBG8.0CAHE3/5B TVS - Diode is based on the principles of avalanche breakdown. Avalanche breakdown occurs when a high electric field causes electrons to accelerate through the depletion region of a p-n junction, resulting in an increase in current. This increased current further increases the electric field, and a positive feedback loop is created. When this happens in a junction, a breakdown voltage is reached and the diode begins to conduct current.

The SMBG8.0CAHE3/5B TVS - Diode is designed to respond to a high voltage transient within a few nanoseconds, and the responsivity of the device is extremely fast. This device also has a low clamping voltage of 5.8V, making it suitable for use in a wide range of applications.

Additionally, the SMBG8.0CAHE3/5B TVS - Diode is designed to be bidirectional, meaning it can protect circuits from overvoltage transients and ESD events in either direction. This makes it highly effective in a variety of applications and ensures reliable protection in any situation.

In order to further ensure the reliability of the SMBG8.0CAHE3/5B TVS - Diode, the device is also designed to self-heal if the condition that triggered its activation is no longer present. This ensures that the diode does not suffer any permanent damage from the event and remains in an excellent working condition.

Conclusion

The SMBG8.0CAHE3/5B TVS - Diode is designed for a variety of applications requiring fast and reliable protection against overvoltage transients and electro-static discharge events. This device is highly responsive and can self-heal if the conditions triggering its activation are no longer present. This makes it highly suitable for use in automotive and aerospace applications, as well as in industrial, telecommunications, and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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