Allicdata Part #: | SMBJ16CD-M3/I-ND |
Manufacturer Part#: |
SMBJ16CD-M3/I |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 16V 25.6V DO214AA |
More Detail: | N/A |
DataSheet: | SMBJ16CD-M3/I Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Voltage - Clamping (Max) @ Ipp: | 25.6V |
Supplier Device Package: | DO-214AA (SMBJ) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 23.4A |
Series: | TransZorb® |
Voltage - Breakdown (Min): | 18.1V |
Voltage - Reverse Standoff (Typ): | 16V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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TVS diodes are a special type of diode designed to act as a protection device to protect various types of electronic components from voltage and current spikes. The SMBJ16CD-M3/I, for instance, is a unidirectional TVS diode based on a silicon-carbide (SiC) construction, offering a peak off-state breakdown voltage of 16V. It is suitable for use in applications such as power supplies, computers, telecommunications, and motor controllers.
At its simplest, the SMBJ16CD-M3/I is a diode which is designed to clamp the voltage across the device to the off-state breakdown voltage. When the voltage across the device exceeds the off-state breakdown voltage, the device will “break down” and allow the voltage to pass through the device. This enables the device to protect the component connected to it from over-voltage.
The SMBJ16CD-M3/I consists of two main components: the silicon-carbide substrate and the MOSFET protection layer. The silicon-carbide substrate is a highly conductive material that is resistant to high voltage, making it well-suited to protecting sensitive parts from over-voltage. The MOSFET protection layer is an oxide-based compound which acts as a shield between the substrate and the external environment. This layer prevents current leakage and provides an additional level of protection against voltage spikes.
The working principle of the SMBJ16CD-M3/I is fairly simple. When the applied voltage is below its off-state breakdown voltage, the diode acts as an open switch and no current flows between the two electrodes. But when the applied voltage exceeds the off-state breakdown voltage, the diode “breakdowns” and current flows. This is known as the breakdown phenomenon and it is how the SMBJ16CD-M3/I can protect sensitive components, such as CPUs, from over-voltage.
The SMBJ16CD-M3/I is used in a number of applications and provides an efficient and reliable way to protect sensitive components from over-voltage. Its wide operating voltages, low leakage current, and high peak power flow capability makes it suitable for a variety of situations, such as protecting computer motherboards from voltage spikes, as well as for use in automotive electronics, motor controllers, and power supplies.
The SMBJ16CD-M3/I can be used in a variety of applications, such as providing overvoltage protection for computers, telecommunications systems, motor controllers, and power supplies. Its easy-to-use working principle makes it a popular choice for users who are seeking a reliable and efficient means of protecting their components.
The specific data is subject to PDF, and the above content is for reference
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SMBJ160A | ON Semicondu... | -- | 1000 | TVS DIODE 160V 259V DO214... |
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SMBJP6KE250AL-TP | Micro Commer... | 0.11 $ | 1000 | TVS DIODE 214V 344V DO214... |
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SMBJ8V5CA | ON Semicondu... | 0.12 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
SMBJ70CA-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 70V 113V DO214A... |
SMBJ12A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
SMBJ28A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 28V 45.4V DO214... |
SMBJ7.0A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 7V 12V DO214AA |
SMBJ11CA-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
SMBJ17A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
SMBJ78CA-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 78V 126V DO214A... |
SMBJ8.0CA-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
SMBJ58A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
SMBJ16A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 16V 26V DO214AA |
SMBJ36A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 36V 58.1V DO214... |
SMBJ24A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
SMBJ10A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 10V 17V DO214AA |
SMBJ26CA-TP | Micro Commer... | -- | 1000 | TVS DIODE 26V 42.1V DO214... |
SMBJ18A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
SMBJ33A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
SMBJ12CA-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
SMBJ13CA-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
SMBJ13A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
SMBJ18CA-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
SMBJ20CA-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
SMBJ22CA-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
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SMBJ28A R5G | Taiwan Semic... | 0.09 $ | 850 | TVS DIODE 28V 45.4V DO214... |
SMBJ40A R5G | Taiwan Semic... | 0.09 $ | 850 | TVS DIODE 40V 64.5V DO214... |
SMBJ36A R5G | Taiwan Semic... | 0.09 $ | 850 | TVS DIODE 36V 58.1V DO214... |
SMBJ170A R5G | Taiwan Semic... | 0.09 $ | 850 | TVS DIODE 170V 275V DO214... |
SMBJ20A R5G | Taiwan Semic... | 0.09 $ | 850 | TVS DIODE 20V 32.4V DO214... |
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