SMBJ16CD-M3/I Allicdata Electronics
Allicdata Part #:

SMBJ16CD-M3/I-ND

Manufacturer Part#:

SMBJ16CD-M3/I

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 16V 25.6V DO214AA
More Detail: N/A
DataSheet: SMBJ16CD-M3/I datasheetSMBJ16CD-M3/I Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Voltage - Clamping (Max) @ Ipp: 25.6V
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 23.4A
Series: TransZorb®
Voltage - Breakdown (Min): 18.1V
Voltage - Reverse Standoff (Typ): 16V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS diodes are a special type of diode designed to act as a protection device to protect various types of electronic components from voltage and current spikes. The SMBJ16CD-M3/I, for instance, is a unidirectional TVS diode based on a silicon-carbide (SiC) construction, offering a peak off-state breakdown voltage of 16V. It is suitable for use in applications such as power supplies, computers, telecommunications, and motor controllers.

At its simplest, the SMBJ16CD-M3/I is a diode which is designed to clamp the voltage across the device to the off-state breakdown voltage. When the voltage across the device exceeds the off-state breakdown voltage, the device will “break down” and allow the voltage to pass through the device. This enables the device to protect the component connected to it from over-voltage.

The SMBJ16CD-M3/I consists of two main components: the silicon-carbide substrate and the MOSFET protection layer. The silicon-carbide substrate is a highly conductive material that is resistant to high voltage, making it well-suited to protecting sensitive parts from over-voltage. The MOSFET protection layer is an oxide-based compound which acts as a shield between the substrate and the external environment. This layer prevents current leakage and provides an additional level of protection against voltage spikes.

The working principle of the SMBJ16CD-M3/I is fairly simple. When the applied voltage is below its off-state breakdown voltage, the diode acts as an open switch and no current flows between the two electrodes. But when the applied voltage exceeds the off-state breakdown voltage, the diode “breakdowns” and current flows. This is known as the breakdown phenomenon and it is how the SMBJ16CD-M3/I can protect sensitive components, such as CPUs, from over-voltage.

The SMBJ16CD-M3/I is used in a number of applications and provides an efficient and reliable way to protect sensitive components from over-voltage. Its wide operating voltages, low leakage current, and high peak power flow capability makes it suitable for a variety of situations, such as protecting computer motherboards from voltage spikes, as well as for use in automotive electronics, motor controllers, and power supplies.

The SMBJ16CD-M3/I can be used in a variety of applications, such as providing overvoltage protection for computers, telecommunications systems, motor controllers, and power supplies. Its easy-to-use working principle makes it a popular choice for users who are seeking a reliable and efficient means of protecting their components.

The specific data is subject to PDF, and the above content is for reference

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