SMBJ45-E3/52

Current - Peak Pulse (10/1000µs):	7.5A
Base Part Number:	SMBJ
Supplier Device Package:	DO-214AA (SMBJ)
Package / Case:	DO-214AA, SMB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	600W
Series:	TransZorb®
Voltage - Clamping (Max) @ Ipp:	80.3V
Voltage - Breakdown (Min):	50V
Voltage - Reverse Standoff (Typ):	45V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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TVS - DiodesA transient-voltage-suppressor (TVS) diode is an electronic component designed to provide surge protection from overvoltage conditions. The SMBJ45-E3/52 is a medium-power, four-leaded ideal diode offering excellent protection against transients with a peak pulse power rating of 600W. It is an excellent choice for applications where low capacitance and high reliability are of great importance.The SMBJ45-E3/52 offers an unidirectional peak power of 600W in order to prevent damage to components and systems due to overvoltage transients. It is used in telecommunications and other industrial applications where high-reliability protection is important. Its primary function is protection against voltage transients. Its low capacitance helps reduce signal integrity problems in high speed systems.The SMBJ45-E3/52 has a variety of applications in fields such as data networks, telecom, and power systems. In the telecom industry, it is used to protect network and communication systems against overvoltage transients. Its low capacitance makes it suitable for protection of data signals in high speed systems, such as USB. Its high power rating makes it an ideal choice for protecting power supplies against over-voltage transients.The working principle of the SMBJ45-E3/52 is based on the principle of avalanche breakdown. When an overvoltage strike occurs, the current increases in a controlled manner. The diode will break down and limited the current to a safe level. This process is known as avalanche breakdown and is used by the SMBJ45-E3/52 to protect devices from overvoltage.The SMBJ45-E3/52 is made up of a silicon diode and a silicon avalanche diode. The silicon diode is designed to provide a low voltage dropout and maximum current capability. The silicon avalanche diode is designed to provide high power handling capabilities and immunity from inductive transients. The two diodes are placed in series for two main reasons. First, the silicon diode acts as a low voltage dropout device and the avalanche diode acts as an overvoltage protection device. Second, the combination of the two diodes provides a higher maximum power handling capability than either device alone.Overall, the SMBJ45-E3/52 is a great choice for a wide variety of applications where low capacitance and high reliability are of great importance. Its ability to withstand overvoltage transients and low capacitance makes it suitable for use in telecom, data networks, and power supplies. Its two-diodes-in-series design makes it highly reliable and able to handle high power levels.

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