SMBJ45CATR Circuit Protection |
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Allicdata Part #: | SMBJ45CATRSMC-ND |
Manufacturer Part#: |
SMBJ45CATR |
Price: | $ 0.05 |
Product Category: | Circuit Protection |
Manufacturer: | SMC Diode Solutions |
Short Description: | TVS DIODE 45V 72.7V SMB |
More Detail: | N/A |
DataSheet: | SMBJ45CATR Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
42000 +: | $ 0.04366 |
Voltage - Clamping (Max) @ Ipp: | 72.7V |
Supplier Device Package: | SMB (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 8.3A |
Series: | -- |
Voltage - Breakdown (Min): | 50V |
Voltage - Reverse Standoff (Typ): | 45V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The SMBJ45CATR is a TVS (Transient Voltage Suppressor) diode, a silicon avalanche diode designed for transient voltage protection. The device utilizes a high-energy avalanche phenomenon. It is configured in a ceramic-filled package for enhanced thermal dissipation. The device is constructed of a silicon pn-junction with a low-leakage encapsulated in a ceramic package. This device is capable of bidirectional ESD protection. It is designed to protect sensitive semiconductor components from electrostatic discharge (ESD) and electromagnetic interferences such as electrostatic discharges (ESDs), electrical fast transients (EFTs) and electromagnetic interference (EMI).
The SMBJ45CATR is designed to protect sensitive electronic components by absorbing the surge current and conducting the current away from vulnerable components. This device can protect against over-voltage transients caused by static discharge into and out of terminals and cables. The SMBJ45CATR diode also acts as a protective shield for electronic systems from ESD, EFT, and EMI transients. It is a three-leaded device with superior clamping characteristics. The SMBJ45CATR device consists of two supplied terminals, a protection diode at the cathode side and a 1K ohm resistor connected in series at the anode side.
The working principle of the SMBJ45CATR is that it provides bidirectional ESD protection by using the avalanche breakdown effect in a pn-junction. When the voltage on either the anode or cathode side is above the breakdown voltage of the junction, the diode enters avalanche breakdown, and current will start to flow. The current will then be clamped and limited to the maximum reverse breakdown current of the diode. This will prevent any further increase in voltage across the diode and protect the device from any over-voltage or over-current conditions.
The SMBJ45CATR device is suitable for various applications such as automotive electronics, home appliances, industrial equipment, computer systems, telecom and networking systems and more. It is designed to be used as a line or load side ESD protection device for telecom and networking systems. It is also suitable for use in power supplies or for other sensitive devices that require over-voltage protection. The device has a Broad operational temperature range of -55°C to +125°C and can provide a fast response to high energy transient events.
In summary, the SMBJ45CATR is a three-terminal TVS (transient voltage suppressor) diode, designed for protection against ESD, EFT, and EMI transients. It features a low clamping voltage, fast response time, wide temperature range, and high peak pulse current capability. It is used to provide bidirectional protection in various applications such as automotive electronics, industrial equipment, telecom and networking systems, and more. The device is designed to clamp the voltage across it and conduct the currents away from vulnerable components, protecting them from overvoltage conditions.
The specific data is subject to PDF, and the above content is for reference
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