SMBJ4747E3/TR13 Allicdata Electronics
Allicdata Part #:

SMBJ4747E3/TR13-ND

Manufacturer Part#:

SMBJ4747E3/TR13

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 20V 2W SMBJ
More Detail: Zener Diode 20V 2W ±10% Surface Mount SMBJ (DO-214...
DataSheet: SMBJ4747E3/TR13 datasheetSMBJ4747E3/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.22061
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 20V
Tolerance: ±10%
Power - Max: 2W
Impedance (Max) (Zzt): 22 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 15.2V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMBJ (DO-214AA)
Base Part Number: SMBJ4747
Description

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Introduction

SMBJ4747E3/TR13 is a single, high-speed zener diode developed for use in a wide range of applications. It is designed to be tolerant to transient voltages, with a maximum to reverse Working voltage of 47V.

Application Field

SMBJ4747E3/TR13 is specifically designed for high-speed circuit protection applications such as suppressing the inrush current during electronic device power-up and protecting electronic components from electrical overstress (EOS) and electrostatic discharge (ESD) events. It is suitable for consumer, medical, and industrial systems and is compatible with Automotive Grade products.

The SMBJ4747E3/TR13 is a high-speed diode that has been designed to be especially sensitive to transient voltage disruptions and has a maximum working voltage of 47V. Its fast response time is ideal for applications where fast circuit response is essential and where protection against instantaneous high-energy electrical disturbances is necessary. With a maximum reverse voltage of 47V, the SMBJ4747E3/TR13is well-suited for dealing with both high overvoltage and ESD events.

In applications where stability and also protection from overvoltages and ESD events are important, the SMBJ4747E3/TR13 can be used to provide reliable protection for power supplies, sensitive electronic circuits, and other sensitive components that may be exposed to sudden voltage disruptions. Due to its small size and low-current requirements, this diode can easily be incorporated into complex circuit designs. Furthermore, its maximum power dissipation of 250mW allows it to be used in high-power automotive applications.

Working Principle

The SMBJ4747E3/TR13rectifier diode is based on Zener diode working principle. It operates in a reverse bias mode in which a voltage greater than the Zener breakdown voltage must be applied in order for the diode to conduct current. When the reverse voltage applied to the diode is greater than the rated breakdown voltage, then the current in the diode will begin to flow and the diode will become an effective electric component for controlling and regulating current flow in a circuit.

In normal operating conditions, the current flow through the diode is limited by its reverse breakdown voltage. When the reverse voltage applied across the diode is less than the specified breakdown voltage, the diode will not conduct current and the circuit will remain inactive. However, in the event of an overvoltage condition, the diode will start to conduct current and thereby protect the circuit from electrical overstress or ESD events.

When the reverse voltage reaches the Zener breakdown voltage value, a small but continuous current begins to flow through the diode. The operating voltage across the diode remains relatively constant as the current flowing through it increases. This voltage remains close to the breakdown voltage throughout all normal operating conditions. When the current reaches its breakdown voltage, the current quickly passes through the diode, reducing the voltage to the breakdown value and promptly turning off the circuit.

The basic principles of operation described above are applicable to most Zener-based rectifier diodes, including the SMBJ4747E3/TR13. The operating characteristic of the diode is determined by the Zener breakdown voltage and the maximum current through the device.

Conclusion

SMBJ4747E3/TR13 is a single-junction, high-speed and high-voltage Zener diode designed for a wide range of applications. It is tolerant to transient voltages, with a maximum working voltage of 47V and provides reliable protection against overvoltage and ESD events. The diode’s fast response time is ideal for applications that require quick circuit protection and its small size allows for easy integration in complex circuit designs. The operation of SMBJ4747E3/TR13 is based on the Zener diode working principle, in which the diode begins to conduct current when a reverse voltage greater than the rated breakdown voltage is applied.

The specific data is subject to PDF, and the above content is for reference

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