Allicdata Part #: | SMBJ4764/TR13-ND |
Manufacturer Part#: |
SMBJ4764/TR13 |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 100V 2W SMBJ |
More Detail: | Zener Diode 100V 2W ±10% Surface Mount SMBJ (DO-21... |
DataSheet: | SMBJ4764/TR13 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.42601 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 100V |
Tolerance: | ±10% |
Power - Max: | 2W |
Impedance (Max) (Zzt): | 350 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 76V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMBJ (DO-214AA) |
Base Part Number: | SMBJ4764 |
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```htmlThe SMBJ4764/TR13 is a single zener diode designed for transient overvoltage protection in power electronics applications. The device offers a low leakage current, good thermal stability, and low reverse voltage capability. This diode is ideal for applications where space is limited and efficient heat dissipation is desired.
The SMBJ4764/TR13 is a high-performance silicon-based unidirectional diode that provides excellent overvoltage protection. The device has a very low dynamic resistance, allowing a very large surge current to be dissipated while providing a stable voltage reference. The device also has a fast response time, typically less than 10 ns, making it ideal for use in transient power protection applications.
This diode is well suited for applications involving power electronics, including power supplies, chargers, and telecommunication systems. Its unidirectional configuration makes it suitable for transient overvoltage protection circuits in systems that switch large voltages and currents. The device is also suitable for high-frequency switching applications, such as in communications circuits.
The working principle of the SMBJ4764/TR13 diode is based on the breakdown of its junction when the reverse voltage applied to the device exceeds its specified breakdown voltage. When the reverse voltage reaches the breakdown voltage, a large surge current is allowed to flow through the device, allowing the voltage to be clamped at the breakdown voltage. This clamped voltage is known as the reference voltage of the diode.
The diode features good heat dissipation and low thermal resistance, allowing it to dissipate large peaks of surge current without overheating. It also features low leakage current and good thermal stability, making it suitable for use over a wide range of temperatures. The breakdown voltage of the device is also highly reliable and temperature-stable. This feature makes the device suitable for power electronics applications, where precise and repeatable threshold detection is required.
In summary, the SMBJ4764/TR13 diode is an ideal device for overvoltage protection in power electronics applications. It features low dynamic resistance, fast response time, good heat dissipation, low thermal resistance, low leakage current and good thermal stability. Furthermore, the breakdown voltage of the device is highly reliable and temperature-stable, making it an ideal choice for applications that require precise and repeatable threshold detection.
```The specific data is subject to PDF, and the above content is for reference
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