SMBJ5340BE3/TR13 Allicdata Electronics
Allicdata Part #:

SMBJ5340BE3/TR13TR-ND

Manufacturer Part#:

SMBJ5340BE3/TR13

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 6V 5W SMBJ
More Detail: Zener Diode 6V 5W ±5% Surface Mount SMBJ (DO-214AA...
DataSheet: SMBJ5340BE3/TR13 datasheetSMBJ5340BE3/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.40748
6000 +: $ 0.38808
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 1 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMBJ (DO-214AA)
Base Part Number: SMBJ5340
Description

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The SMBJ5340BE3/TR13 diode is most commonly used as a low voltage, low power switching diode. It has a wide range of applications that include protection of semiconductor devices and circuits against large overloads, reverse currents, and short circuits. It is also used as a temperature-limiting, or “thermal cut-off” device in high-power switching applications.

The SMBJ5340BE3/TR13 diode belongs to the Diodes-Zener-Single category. It is a single-pole, unidirectional diode with a zener voltage of 5.5 V and a power dissipation of 400 mW. The zener voltage is the voltage drop across the diode when the current through it is above a certain point. The power dissipation is the maximum amount of power the diode can dissipate without damage.

The SMBJ5340BE3/TR13 diode has a 4-pin SOD-323 package and is capable of switching at up to 200 VDC and at a maximum current of 400 mA. It is capable of handling transient currents up to 1A. It’s peak reverse voltage rating is 5.5 V and its operating temperature range is -55°C to 150°C.

The SMBJ5340BE3/TR13 diode is used in a variety of different applications including protection circuits, lighting ballast, smart meters, and telecom equipment. In protection circuits it is used to prevent damage from overvoltage, overcurrent, and short circuit conditions. It is also used in lighting ballast applications to regulate the input voltage and current. In telecom equipment it is used to protect against ESD spikes. Smart meter applications use the diode to protect from reverse current, overcurrent, and overvoltage.

The working principle of the SMBJ5340BE3/TR13 diode is based on the principle of reverse bias breakdown. In a reverse bias breakdown, the zener voltage of the diode is reached. As the voltage across the diode increases, the current through the diode increases, until the breakdown voltage is reached and the diode begins to conduct. The breakdown voltage is a function of the doping concentration of the semiconductor material used to make the diode. When the current through the diode exceeds a certain level, the diode will begin to conduct, thus allowing a current to flow through it.

The SMBJ5340BE3/TR13 diode is a widely used device for many different applications. It’s wide range of applications and its low cost make it a popular diode for many applications ranging from digital and analog to power switching. Its low voltage and power dissipation capabilities also make it a great choice for high power switching applications. Its operating temperature range and its peak reverse voltage rating make it a suitable option for many industrial applications as well. The working principle of the device is based on reverse bias breakdown, where the voltage across the diode reaches a certain point and the current through the diode is then allowed to flow.

In conclusion, the SMBJ5340BE3/TR13 diode is a widely used device in a variety of different applications. It can be used in protection circuits, lighting ballast, smart meters, and telecom equipment. Its wide range of applications and its reasonable cost make it a popular diode for many different applications. Its working principle is based on the principle of reverse bias breakdown, where the voltage across the diode reaches a certain point and the current through the diode is then allowed to flow.

The specific data is subject to PDF, and the above content is for reference

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