Allicdata Part #: | SMBJ5350B/TR13-ND |
Manufacturer Part#: |
SMBJ5350B/TR13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 13V 5W SMBJ |
More Detail: | Zener Diode 13V 5W ±5% Surface Mount SMBJ (DO-214A... |
DataSheet: | SMBJ5350B/TR13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 13V |
Tolerance: | ±5% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 2.5 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 9.4V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMBJ (DO-214AA) |
Base Part Number: | SMBJ5350 |
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Diodes are a type of electronic components that allow current to flow in a single direction. Among these diodes, Zener diodes are a unique kind of diode that can also allow current to flow in the reverse direction in certain conditions. The SMBJ5350B/TR13 is a single Zener diode manufactured by NXP Semiconductors.
In technical terms, the SMBJ5350B/TR13 is an avalanche breakdown diode, which means that it breaks down at a certain voltage, allowing current to flow in both directions. This breakdown voltage can be easily changed during manufacturing or by incorporating voltage regulating components into the circuit.
The SMBJ5350B/TR13\'s applications lie in protecting circuit components from overvoltage events, particularly those associated with transients such as electrostatic discharge, electromagnetic interference and cable/transformer coupling. It also works well for preventing damage to power supplies, establishing references for laboratory testing, and building voltage regulators and voltage dividers.
In terms of the working principle of the SMBJ5350B/TR13, the diode is designed to conduct electricity freely when the voltage across it is below a predetermined breakdown voltage. This voltage is determined by the materials used in the diode\'s construction, and can be modified through manufacturing-related processes. When the voltage across it is higher than this breakdown voltage, the diode enters an avalanche breakdown state and current flows freely in both directions.
The SMBJ5350B/TR13 is made with a planar technology and a junction passivation layer to deliver higher performance and better protection against static charge buildup. It also has a hermetically sealed leadless package, which enhances the device\'s reliability. The SMBJ5350B/TR13 is widely used in equipment such as VCRs, digital cameras, touch-panel controls and optoelectronic devices.
In conclusion, the SMBJ5350B/TR13 is a single Zener diode manufactured by NXP Semiconductors. It is designed to protect circuit components from overvoltage events, and is widely used in equipment such as VCRs, digital cameras, touch-panel controls and optoelectronic devices. Its working principle is straightforward; it freely conducts electricity when the voltage across it is below the designated breakdown voltage, and it enters an avalanche breakdown state and conducts current in both directions when voltage is higher than the breakdown voltage.
The specific data is subject to PDF, and the above content is for reference
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