SMBJ5360B/TR13

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The SMBJ5360B/TR13 Diode is a type of Zener Diode that is single-location encapsulated and has low-voltage profiling, making it a great choice for power protection applications. It is designed to protect against overvoltage transients by clamping the voltage to a safe level, while maintaining a low reverse leakage. This diode can be used in various applications, such as as battery protection in LED circuits, load protection in power supplies, and as an ESD or EMI protection device against overvoltage transients in automotive, industrial, and communication systems.

The SMBJ5360B/TR13 operates at a breakdown voltage of 5.3V and can handle up to 1.0A of peak guidance current and 600W peak power. With its 3.2Vz and 5.3Vz peak pulsed breakdown characteristics, this Zener Diode offers excellent reverse current performance, making it ideal for protection against high-voltage transients. It is also easy to mount and handles a wide range of environmental conditions, making it a great choice for low-voltage protection applications.

The working principle of the SMBJ5360B/TR13 lies in its ability to clamp the voltage and protect against overvoltage transients. This is achieved through the breakdown voltage of the diode. When the voltage of the circuit exceeds the Zener voltage, electrons in the diode begin to flow in the reverse direction, creating a conducting path between the circuit and the diode, effectively clamping the voltage to the breakdown value of the diode. This prevents the voltage from exceeding a safe level, thus protecting the circuit from damage.

The SMBJ5360B/TR13 Zener Diode is a great choice for power protection applications due to its low-voltage profiling, excellent reverse current performance, and wide range of environmental conditions. It is a very reliable component that can be used in automotive, industrial, and communication systems for ESD or EMI protection against overvoltage transients, as well as for load protection in power supplies and battery protection in LED circuits.

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