Allicdata Part #: | SMBJ5372AE3/TR13-ND |
Manufacturer Part#: |
SMBJ5372AE3/TR13 |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 62V 5W SMBJ |
More Detail: | Zener Diode 62V 5W ±10% Surface Mount SMBJ (DO-214... |
DataSheet: | SMBJ5372AE3/TR13 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.39822 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 62V |
Tolerance: | ±10% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 42 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 44.6V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMBJ (DO-214AA) |
Base Part Number: | SMBJ5372 |
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SMBJ5372AE3/TR13 Application Field and Working Principle
The SMBJ5372AE3/TR13 is a Diode – Zener – Single which is applied in a wide range of applications from power regulating and DC clamping to ESD protection. The device has a maximum power rating of 500mW and a reverse voltage of 5.1V.
Application Field
The SMBJ5372AE3/TR13 is mainly used to provide a regulated voltage required to operate specific electronic components or systems. It also provides protection against sudden electrical surges and transients, operating as a clamping element that clamps voltage spikes and reduces noise. It is capable of highly reliable behavior under a wide range of operating conditions and is proven to withstand high surge currents and safeguard electrical circuits against output disconnection damage. The device also provides some protection to only those voltage sources of circuits that are sensitive to overvoltage.
In ultra-sensitive digital circuits, the SMBJ5372AE3/TR13 regulates and clamps large voltage peaks, so that signals can be transmitted without being damaged by external sources of interference. The device is also used in RF circuits to protect against EMI and ESD, ensuring signal integrity and providing reliable operation of the circuit without the risk of electric shock.
Working Principle
The SMBJ5372AE3/TR13 is constructed using two layers of P-type and N-type silicon, resulting in a P-N junction that is composed of a thin intrinsic layer between them. As current flows through the intrinsic layer, the electric field created near the junction increases, and at a certain level, it begins to impede the current flow. As electric voltage passes through the junction, a charge carrier counteracts the electric field, allowing current to continue flowing.
When in reverse mode, the electric potential increases exponentially in the reverse direction with respect to the P-type material. As the voltage reaches the breakdown voltage, current begins to flow, partially overcoming the electric field and providing a low resistance path for current.
The balanced current and voltage results in the clamping of voltage, and the SMBJ5372AE3/TR13 offers protection against excessive voltages. The principle of this device is particularly important in digital circuits, as it ensures that sensitivity to overvoltage is prevented and that current flows through the circuit is maintained at a steady level.
Conclusion
The SMBJ5372AE3/TR13 Diode – Zener – Single is an ideal device for protecting sensitive digital circuits against unwanted voltage peaks and for providing reliable and effective clamping against ESD. It is widely used in a variety of applications from power regulation and DC clamping to ESD protection. By understanding the working principle of this device, users can gain a better appreciation of the potential and use of this device in different application fields.
The specific data is subject to PDF, and the above content is for reference
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