SMBJ5918BE3/TR13

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Diodes are simple electronic components that allow electric current to flow in just one direction. Zener diodes are a type of diode that are designed to operate in the reverse breakdown region and are mainly used for voltage regulation, signal clipping, and providing electrical isolation. The SMBJ5918BE3/TR13 is a single Zener diode with an integrated transient suppression electrode, specifically designed for protection against surge voltages of up to 14V.

The SMBJ5918BE3/TR13 has a glass passivating magnesium-oxide passivated diode, meaning it is able to self-alter its carrier concentration as needed. The glass passivation helps protect the component while the magnesium-oxide passivated diode provides an added layer of protection. It has a glass-body package type with a DO-214AB package style, so that it can be surface mounted for an easier installation. The typical Zener breakdown voltage of the diode is 18V and it provides an operating temperature of -55°C to 150°C.

The main application of the SMBJ5918BE3/TR13 is for general purpose ESD protection in sensitive circuits like communications equipment and other electronics exposed to extreme surges of electrostatic discharge electricity. It is also used for voltage-clamping functionality to safely lower the input voltage of a circuit, prevent overvoltage fault and provide power up protection.

The working principle of the SMBJ5918BE3/TR13 involves two main processes. The first involves the electric current in the diode’s junction. When forward biased, current will flow through the diode as normal. When reverse biased, the electric field in the junction pulls with it a semi-conductor material called “holes”, which can easily move outside the junction. As the reverse-bias voltage is increased, the electric field’s intensity also increases, leading to an increase of carriers at the junction. This creates a depletion region within the junction, resulting in a reduced current.

The second process is when the reverse-bias voltage exceeds a certain level, called the Zener breakdown voltage. The electric field creates a high concentration of carriers in the junction that easily move outside, resulting in a high-intensity electric field at the center of the depletion region. This electric field is strong enough to break the covalent bonds of the semiconductor material, creating a current path. This causes the current to spike and form a holdover that continues to conduct current even after the applied voltage drops.

In summary, the SMBJ5918BE3/TR13 is a single Zener diode with its main application being for ESD protection and voltage-clamping. It has a glass passivation and a magnesium-oxide passivated diode, with a glass-body package type and DO-214AB package style. It has a typical Zener breakdown voltage of 18V and an operating temperature of -55°C to 150°C. The two processes of the diode involve electric currents in the diode’s junction that form the depletion region and Zener breakdown voltage when the reverse-bias voltage exceeds a certain level.

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