SMBZ5933B-E3/52 Allicdata Electronics
Allicdata Part #:

SMBZ5933B-E3/52-ND

Manufacturer Part#:

SMBZ5933B-E3/52

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 22V 3W DO214AA
More Detail: Zener Diode 22V 3W ±5% Surface Mount DO-214AA (SMB...
DataSheet: SMBZ5933B-E3/52 datasheetSMBZ5933B-E3/52 Datasheet/PDF
Quantity: 1000
1 +: $ 0.12000
10 +: $ 0.11640
100 +: $ 0.11400
1000 +: $ 0.11160
10000 +: $ 0.10800
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 22V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 17.5 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 16.7V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMBJ)
Description

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The SMBZ5933B-E3/52 is a Diode - Zener - Single, which is primarily used for low voltage implementations. It\'s an excellent choice for protecting semiconductors of all kinds, most notably surface mount devices, from short circuits and over voltages, whose potential damage might otherwise be caused by static electricity and lightning strikes.

The SMBZ5933B-E3/52 features zener voltage regulation and a breakdown voltage of 5.6V, a maximum power dissipation of 350 mW, and a maximum reverse leakage current of 5 μA. The device can be used in various applications, such as stabilizing and regulating output voltages in voltage regulators, voltage stabilizers, and voltage waveform shaping circuits.

In addition to being an excellent choice for protecting semiconductor devices from short circuits and over voltages, the SMBZ5933B-E3/52 can also be used in precision voltage references, waveform shaping circuits, and high frequency switching circuits. It has a small low profile surface mount SOD-323 package, making it an excellent choice for applications where space is at a premium.

The SMBZ5933B-E3/52 works by using two different avalanche breakdown mechanisms: a temperature-independent avalanche breakdown, and a temperature-dependant breakdown. In the temperature-independent breakdown mechanism, the electric field created between the P-N junction of the zener diode is so great that it ruptures the covalent bonds inside the silicon material, creating electron-hole pairs. This causes the current to increase significantly and the voltage to drop suddenly, and subsequently clamps the voltage at its breakdown (zener) voltage.

In the temperature-dependent breakdown mechanism, a larger breakdown occurs as temperature increases. The temperature-dependent breakdown enables the breakdown voltage to remain stable, even at extreme temperatures. This mechanism is what allows the SMBZ5933B-E3/52 to maintain a constant breakdown voltage when exposed to temperature variability.

In conclusion, the SMBZ5933B-E3/52 is a Diode - Zener - Single, used primarily for low voltage applications, such as protecting semiconductor devices from over voltages and short circuits, stabilizing and regulating output voltages in voltage regulators, references and waveform shaping circuits, and high frequency switching circuits. It features zener voltage regulation, a breakdown voltage of 5.6V, a maximum power dissipation of 350 mW, and a maximum reverse leakage current of 5 μA. The SMBZ5933B-E3/52 has a small low profile surface mount SOD-323 package, and works thanks to two different avalanche breakdown mechanisms: a temperature-independent avalanche breakdown, and a temperature-dependant breakdown, which allows the device to maintain a constant breakdown voltage even at extremely high or low temperatures.

The specific data is subject to PDF, and the above content is for reference

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