Allicdata Part #: | SMC5K14AHM3/I-ND |
Manufacturer Part#: |
SMC5K14AHM3/I |
Price: | $ 0.32 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 14V 23.2V DO214AB |
More Detail: | N/A |
DataSheet: | SMC5K14AHM3/I Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3500 +: | $ 0.28709 |
Current - Peak Pulse (10/1000µs): | 216A |
Supplier Device Package: | DO-214AB (SMC) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 5000W (5kW) |
Series: | Automotive, AEC-Q101, TransZorb® |
Voltage - Clamping (Max) @ Ipp: | 23.2V |
Voltage - Breakdown (Min): | 15.6V |
Voltage - Reverse Standoff (Typ): | 14V |
Unidirectional Channels: | 1 |
Type: | Zener |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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TVS - diodes are used to protect sensitive electronic equipment from high voltage transients such as electrostatic discharge (ESD), lightning strikes, and other potentially damaging events. The SMC5K14AHM3/I is a special application of these diodes specifically designed as an avalanche breakdown device to provide protection against high-energy, high-voltage spikes.
The SMC5K14AHM3/I is a power Schottky diode that consist of a PN junction with a heavily doped region known as the avalanche region, which is used to trigger the breakdown. These diodes have a very low forward voltage drop of 0.625 V and are capable of sustaining avalanche breakdown voltages up to 360 V. This makes them an ideal choice for high voltage protection applications that require low power consumption.
Application Field
The SMC5K14AHM3/I diode is ideal for applications where high voltage protection is required. It is commonly used in communication and industrial systems to protect data lines and power circuits from ESD and lightning. The device also offers protection for microprocessors and integrated circuits that are more susceptible to voltage transients, giving it a wide range of applications in computing, automotive, industrial, and telecom sectors.
The SMC5K14AHM3/I diode has an outstanding surge capability of 1 kilovolt, making it suitable for a variety of applications, such as broadband networks, DSL modems, RF transmission systems, and surge protection for circuit boards. The diode\'s low voltage drop and ultra-fast response time make it suitable for high speed data protection, and the 360 V breakdown voltage makes it an effective protection device for sensitive electronic components.
Working Principle
The working principle of the SMC5K14AHM3/I diode is based on the avalanche breakdown process. When a potential greater than 360 V is applied to the diode, free electrons are injected into the highly doped avalanche region, where they are accelerated by the electric field. As the electrons collide with atoms, they transfer their energy to the atoms, creating additional electrons through impact ionization. This process rapidly builds up an avalanche of electrons, causing the large current that triggers the breakdown.
When the transient voltage is over, the current rapidly decreases and the diode returns to its off-state. The diode provides excellent performance due to its fast response time and low voltage drop, which enable efficient high voltage protection while keeping energy losses to a minimum.
The SMC5K14AHM3/I diode is an effective solution for high voltage protection applications where current handling and low energy losses are important. It offers good surge capability and fast response time, making it suitable for sensitive circuits and power converters.
The specific data is subject to PDF, and the above content is for reference
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