SMCJ13A-Q Allicdata Electronics
Allicdata Part #:

SMCJ13A-Q-ND

Manufacturer Part#:

SMCJ13A-Q

Price: $ 0.18
Product Category:

Circuit Protection

Manufacturer: Bourns Inc.
Short Description: TVS DIODE 13V 21.5V SMC
More Detail: N/A
DataSheet: SMCJ13A-Q datasheetSMCJ13A-Q Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
12000 +: $ 0.15876
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Current - Peak Pulse (10/1000µs): 69.8A
Supplier Device Package: SMC (DO-214AB)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Series: Automotive, AEC-Q101, SMCJ
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Voltage - Reverse Standoff (Typ): 13V
Unidirectional Channels: 1
Type: Zener
Lead Free Status / RoHS Status: --
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Tranline semiconductor multipoint protection devices, such as SMCJ13A-Q, provide consistent high electrical performance with self-grounding response to ESD events. This type of device is ideal for nowadays’ increasingly mobile electronics, which often experience sharp levels of EM and ESD.

SMCJ13A-Q devices are part of the TVS – Diodes family and are specifically designed to protect sensitive equipment from both over-current and over-voltage damage due to transient events. They are built upon Tranline’s patented by-passing diode technology which utilizes an optimized genner diode array to bypass AC transients and allow for a fast clamping response to ESD events.

The SMCJ13A-Q provides transient protection up to 13 A for 8/20 microsecond pulses and has a 3 Ohm series Impedance. It also includes a welded steel shield designed to attract and absorb potentially harmful EMI/EMC radiation as well as provides an optimal electrical shield for the device’s I/O ports.

The SMCJ13A-Q’s working principle is based on the use of avalanche junctions which provide a high-speed, non-linear response to over-voltage conditions. The avalanche junction is formed by doping two semiconductors with different doping concentrations and applying a voltage. This voltage creates an electrical field and, eventually, high electric current due to the avalanche breakdown. Then the current is diverted from the sensitive circuit through the device’s internal by-passing diode array.

The device is extremely versatile and comes in a variety of I/O configurations. It can come with an ultra-small form factor or with a through-hole soldering option. In addition, the device supports multiple AC and DC voltages and can be used with contact, air, and human body discharge, making it the ideal choice for ESD protection.

Moreover, the device features an extremely fast clamping response as well as low capacitance and service voltage. It is compatible with multiple power buses, including 5V, 12V, and 24V, and can withstand voltage surges up to 10kV (IEC 61000-4-2) with a surge let-through rate of up to 2.75V.

The SMCJ13A-Q is ideal for a range of applications, including networking, telecommunications, consumer, automotive, and military & aerospace. Because of its multiple features, it is the perfect solution for protecting numerous pieces of sensitive and expensive equipment from ESD and other electrical transients.

The specific data is subject to PDF, and the above content is for reference

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