SMCJ33AHE3/9AT Allicdata Electronics
Allicdata Part #:

SMCJ33AHE3/9AT-ND

Manufacturer Part#:

SMCJ33AHE3/9AT

Price: $ 0.22
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 33V 53.3V DO214AB
More Detail: N/A
DataSheet: SMCJ33AHE3/9AT datasheetSMCJ33AHE3/9AT Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3500 +: $ 0.20335
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Current - Peak Pulse (10/1000µs): 28.1A
Base Part Number: SMCJ
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Voltage - Reverse Standoff (Typ): 33V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (transient voltage suppressor) diodes are an important part of a power and signal integrity design. They help protect delicate circuits from electrostatic discharge (ESD) and other over voltage events. An SMCJ33AHE3/9AT TVS diode is a unidirectional (synchronous) device designed to provide protection in case of over-voltage transients.

The SMCJ33AHE3/9AT is a high reliability surface mount device. It has an SMC package and offers excellent clamping performance when compared to other TVS devices in the same form factor. The device is optimized for very fast and efficient clamping of over-voltage events. The SMCJ33AHE3/9AT can handle up to 33 V of peak pulse power dissipation at 100 A peak pulse current. This makes it an ideal choice for many applications requiring protection from high voltage and high current ESD events.

SMCJ33AHE3/9AT is used in various power and signal integrity applications, such as protecting sensitive digital circuits from over-voltage transients caused by electrostatic discharge (ESD), inductive switching or crosstalk. The device is also suited for protecting sensitive analog and RF circuits from damage due to static electricity or other sources of electrical transients. The SMCJ33AHE3/9AT has a reverse breakdown voltage of 9 V and is able to withstand repetitive ESD events of 8 kV (human body model) with a response time of less than 1 ns.

The working principle of a TVS diode is relatively simple. When exposed to an over-voltage transient, the diode quickly turns “on” (becomes conductive) and clamps the voltage. The SMCJ33AHE3/9AT is able to handle such transients up to 33 V and absorbs their energy, thus protecting the circuit from damage. The device then quickly turns “off”, restoring normal operation.

In summary, the SMCJ33AHE3/9AT is an excellent choice for protecting sensitive circuits from over-voltage transients. The device has an SMC package, a reverse breakdown voltage of 9 V and can handle up to 33 V of peak pulse power dissipation at 100 A peak pulse current. It is used in various applications to protect digital, analog and RF circuits. The device works by quickly turning “on” (conducting) in response to an over-voltage event and then quickly turning “off” (non-conducting) after the transient is handled.

The specific data is subject to PDF, and the above content is for reference

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