Allicdata Part #: | SMJB44H11T4G-ND |
Manufacturer Part#: |
SMJB44H11T4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 8A D2PAK |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | SMJB44H11T4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | -- |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
Base Part Number: | MJB44H11 |
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A SMJB44H11T4G is a type of transistors known as a Bipolar Junction Transistor (BJT). BJTs are a type of electrical power device that is used for switching applications. They are different from other types of power devices such as MOSFETs, IGBTs, and field-effect transistors (FETs), because BJTs are self-biasing devices and are usually simpler to use than the other power devices. The SMJB44H11T4G is a single BJT and is designed for use in a wide range of applications.
Application
The SMJB44H11T4G is suitable for a wide range of applications. It is used in many types of power electronics, including automotive applications and power supplies. It can also be used as a constant-current source, as an amplifier, and as a switch in many circuits. Due to its small size and low power consumption, it is also suitable for use in portable electronics. Additionally, the SMJB44H11T4G is suitable for applications that require a high frequency signal, such as in radio communications.
Working Principle
The SMJB44H11T4G is a self-biased BJT. This means that it does not require external bias current or voltage, and it is easier to use than other types of power devices that require external bias components. The way it works is that there are three electrodes in the device: the base, the emitter and the collector. The base and the collector form what is known as a PN junction. When a current is applied to the base electrode, the voltage at the PN junction is changed. This changes the amount of current flowing through the emitter and collector, allowing the transistor to amplify the signal or switch it on or off.
Conclusion
The SMJB44H11T4G is an ideal device for many types of applications, including automotive, power supplies and portable electronics. The SMJB44H11T4G is a single BJT, and it is a self-biasing device, making it easy to use and reliable. The three electrodes in the device, the base, the emitter and the collector, work together to amplify the signal or switch it on or off. The SMJB44H11T4G is suitable for a wide range of applications, and it is a powerful and reliable device for many types of power electronics.
The specific data is subject to PDF, and the above content is for reference
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