SML4744AHE3/5A Allicdata Electronics
Allicdata Part #:

SML4744AHE3/5A-ND

Manufacturer Part#:

SML4744AHE3/5A

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 15V 1W DO214AC
More Detail: Zener Diode 15V 1W ±5% Surface Mount DO-214AC (SMA...
DataSheet: SML4744AHE3/5A datasheetSML4744AHE3/5A Datasheet/PDF
Quantity: 1000
7500 +: $ 0.11990
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 15V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 14 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 11.4V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Description

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SML4744AHE3/5A, which belongs to diodes- Zener-Single, is a high power Zener diode with a range of power dissipation.The operating temperature is between -55 ℃ and + 175 ℃ and the maximum junction temperature is up to + 175 ℃. It has great advantage with high reliability, low leakagecurrent and stable performance. In comparison with ordinary diodes, SML4744AHE3/5A has a wide range of applications in electronic products.

The application fields of SML4744AHE3/5A are mainly transmitter, radio, mobile phone, display, computer / peripheral equipment, audio-video equipment, military and other fields. The working principle of SML4744AHE3/5A is related to its structure. It contains a single junction with a high conductivity PN junction. When a certain reverse voltage is applied to the diode, the electrons in the N region are driven into the P region. At the same time, due to the difference in equilibrium between the two sides of the diode, some valence electrons in the P region are driven into the N region. A small current flows through the diode in this way.

The structure of SML4744AHE3/5A can be divided into three parts, the cathode, anode and PN junction. The cathode is connected to the N type PN junction layer, and the anode connects with the P type PN junction layer. When an electric current passes through the PN junction layer, electrostatic field is generated which allows the electrons to flow from N layer to the P layer. The electric current then flows from the anode connection to the cathode connection.

When a reverse voltage is applied at the PN junction, the electric field will also increase. However, the reverse voltage must exceed a certain threshold before the electrons can flow from the P layer back to the N layer. This is the reason why reverse currents are not generated under normal conditions. When the PN junction is in equilibrium, no current will flow through the diode.

In addition to the above principle, SML4744AHE3/5A also uses a doping technique to make it more sensitive than ordinary diodes. The doping technique can be used to make the Zener diode\'s reverse breakdown voltage more stable and able to withstand larger reverse voltages. Therefore, it can provide higher temperature protection and protect the transmitter.

To sum up, SML4744AHE3/5A belongs to diodes- Zener-Single, which has a high power Zener diode with a range of power dissipation. With the help of doping techniques, SML4744AHE3/5A can provide higher temperature protection and protect the transmitter. It has great advantage with high reliability, low leakage current and stable performance, so it has a wide range of applications in various fields.

The specific data is subject to PDF, and the above content is for reference

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