SMLJ210AE3/TR13 Allicdata Electronics
Allicdata Part #:

SMLJ210AE3/TR13-ND

Manufacturer Part#:

SMLJ210AE3/TR13

Price: $ 0.90
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 210V DO214AB
More Detail: N/A
DataSheet: SMLJ210AE3/TR13 datasheetSMLJ210AE3/TR13 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.82158
Stock 1000Can Ship Immediately
$ 0.9
Specifications
Current - Peak Pulse (10/1000µs): --
Base Part Number: SMLJ210
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 300W
Series: --
Voltage - Clamping (Max) @ Ipp: --
Voltage - Breakdown (Min): --
Voltage - Reverse Standoff (Typ): 210V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes is mainly used to protect circuit elements from high-voltage, high-energy surges. The SMLJ210AE3/TR13 is a unidirectional 600 W (10/1000 μs) transient voltage suppressor (TVS) diode. It gives strong protection against electrostatic discharge (ESD) and surge events in industrial and consumer electronics.

Application Field and Working Principle

The SMLJ210AE3/TR13 is primarily used in Voltages from 6V to 20V, clamping specialty applications such as cellular telephone charging ports, smart phones, notebook computers, automotive audio systems and disk drives. It also provides protection from surges and ESD in industrial and consumer electronics. The device also has a low capacitance which allows it to be used in high speed data lines in proximity of strong ESD discharging.

The SMLJ210AE3/TR13 is a unidirectional 5S and 5T surface mount TVS diode with 600 W peak pulse power. It offers low capacitance and fast response times to protect data lines from ESD, EFT, and surge events. The Pb-free device is provided in RoHS compliant, JEDEC standard SOD-123FL packages with a 0.2 inch (5.08 mm) clip hold down for improved electrical and mechanical connection.

The device consists of two separate inorganic silicon wafers with an active region, and two glass passivated junction boundaries that are connected together via a low impedance path. This creates an avalanche breakdown and provides an easy conduction path for transient currents. The active region acts as a sharp breakdown voltage at which the current is clamped, allowing for a large voltage reduction to the protected circuit.

During normal operation, the SMLJ210AE3/TR13 is reverse biased. When a transient surge occurs, the voltage across the diode rises above the breakdown voltage and it turns on, providing a low impedance conduction path. The device quickly clamps the surge voltage to protect the connected circuit. As the transient surge subsides, the device will turn off and the voltage will drop to the safe level. After the surge is over, the device will return to its reverse-biased, non-conductive state.

The SMLJ210AE3/TR13 provides reliable protection from high-voltage, high-energy transients and protects sensitive circuit elements from overvoltage, overcurrent, undervoltage, and electrostatic discharge events. The device is well suited for high-speed applications which require fast response times and low capacitance. The SMLJ210AE3/TR13 is a cost-effective solution that can be used in consumer and industrial electronics for surge protection.

The specific data is subject to PDF, and the above content is for reference

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