SMP1302-074LF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes-RF devices, such as the SMP1302-074LF, are semiconductor devices used in radio frequency (RF) applications, such as switching, amplification, or signal conditioning. The SMP1302-074LF is a n-channel, low-voltage MOSFET for use in a variety of RF circuit designs. In this article, we will explore the application field and working principle of SMP1302-074LF.

Application Field

The SMP1302-074LF is designed for use in a variety of RF circuit designs, such as mobile communication systems, land mobile radio, wireless local area networks, and cellular communication systems. The device is well suited for power amplification, signal conditioning, and switching applications in these systems.

The device features an integral diode that provides excellent protection against input ESD surge voltages. This makes the device ideal for applications such as ESD protection circuits and other applications that require high ESD protection. Additionally, the SMP1302-074LF has low on-resistance, which makes it well suited for use in DC/DC converters, and other power conversion applications.

Working Principle

At its core, the SMP1302-074LF consists of an n-channel enhancement-mode MOSFET with a built-in diode. The MOSFET is constructed from vertical MOS silicon gate technology. The device is operated by applying a gate bias voltage, thus forming an electric channel from source to drain. The induced channel conducts a current from source to drain with a low on-resistance. The built-in diode protects the device from reverse voltages and other overvoltage applications. The diode also allows for a faster power-on time for the device.

The operation of the device can be divided into two stages: the on-state, and the off-state. During the on-state, the switch is conducting, and the MOSFET acts as a variable resistor. During the off-state, the switch is open, and the MOSFET acts as an open switch. The device can be used in either of these two states. The on-state may be used for amplification or signal conditioning, while the off-state may be used for switching.

The SMP1302-074LF is designed to handle voltages up to 30V. The device has a maximum on-resistance of 90mΩ, with a maximum off-state leakage of 6.5nA. The drain-source breakdown voltage is specified at 40V, with a maximum drain-source voltage of 60V. The device also has an avalanche energy rating of 50mJ.

In conclusion, the SMP1302-074LF is a n-channel enhancement-mode MOSFET with a built-in diode. The device is suitable for use in a variety of RF circuit designs, such as mobile communication systems, land mobile radio, wireless local area networks, and cellular communication systems. The device is well suited for power amplification, signal conditioning, and switching applications in these systems. Additionally, the device features an integral diode that provides excellent protection against input ESD surge voltages.

The specific data is subject to PDF, and the above content is for reference