SMP1320-011LF Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	PIN - Single
Voltage - Peak Reverse (Max):	50V
Capacitance @ Vr, F:	0.3pF @ 30V, 1MHz
Resistance @ If, F:	900 mOhm @ 10mA, 100MHz
Power Dissipation (Max):	250mW
Operating Temperature:	-65°C ~ 150°C (TA)
Package / Case:	SC-76, SOD-323
Supplier Device Package:	SOD-323
Base Part Number:	SMP1320-011

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SMP1320-011LF is a low noise amplifier of GaN technology, designed for RF signal signal applications.It has a power gain of 17dB and is designed to improve the signal-to-noise ratio for a variety of applications. It features an ultra-low noise amplifier, low current consumption and wide bandwidth. The SMP1320-011LF is composed of an input matching circuit, gain control and amplification circuit and output matching circuit, which enables it to meet the most demanding wireless performance requirements of today’s wireless systems. The Gain Control pin can be adjusted to control the gain, up to -7dBm maximum. The input return loss can be adjusted to suit specific applications by controlling the output power with the Gain Control pin. To ensure reliable performance, the SMP1320-011LF is designed with advanced materials, including the high efficiency GaN substrate and related epoxy processing. These materials provide the SMP1320-011LF with its high thermal conductivity, lower current consumption and reduced signal interference. The device also features advanced power detection circuitry, allowing it to detect signal strength from external sources and adjust its gain accordingly. With the integrated noise decoder it is able to detect any interference or noise, ensuring signal integrity. In addition, it has integrated protection circuitry that guards against transient surges and other environment issues. The device has an output power of up to -5 dBm, making it suitable for both reception and transmission. In addition to its power detection circuitry, the SMP1320-011LF features wideband operation for maximum coverage of signals in a variety of frequencies. It is optimized to provide optimal gain and noise performance, with a noise figure of only 1.3 dB. This makes it suitable for applications in communications, broadcasting and more. Furthermore, the device has a highRF power rating of +30 dBm, ensuring robust protection against harsh environments. The SMP1320-011LF is ESD-resistant, meaning it is capable of withstanding Electro Static Discharge (ESD) up to 8kV. This ensures reliability in the most extreme environments, providing reliable performance to the most demanding applications.The SMP1320-011LF is designed for high frequency applications and is integrated with a wide range of features to provide a comprehensive solution for RF needs. It has an operating temperature range of -40 to +85 degrees Celsius and is available in both through-hole and surface mount packages. This makes it suitable for use in a variety of environments, from consumer to industrial. In conclusion, the SMP1320-011LF is an excellent low noise amplifier of GaN technology, designed for RF signal applications. It is characterized by its low current consumption, ultra-low noise figure and wideband performance, and is ESD-resistant in the toughest of environments. With its advanced features and powerful capabilities, the SMP1320-011LF is an ideal solution for a variety of RF and communication applications.

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