Allicdata Part #: | 863-1278-2-ND |
Manufacturer Part#: |
SMP1322-017LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Skyworks Solutions Inc. |
Short Description: | DIODE RF PIN 50V 250MW SOT143 |
More Detail: | RF Diode PIN - Single 50V 250mW SOT-143-4 |
DataSheet: | SMP1322-017LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 50V |
Capacitance @ Vr, F: | 1.15pF @ 30V, 1MHz |
Resistance @ If, F: | 500 mOhm @ 10mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | -65°C ~ 150°C (TA) |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143-4 |
Base Part Number: | SMP1322-017 |
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The SMP1322-017LF, which is classified under Diodes - RF, is a high frequency Silicon Schottky Barrier Diode designed for high speed switching applications, particularly in wireless communication systems. It is a reliable and versatile device due to its very low forward voltage drop, zero reverse current, fast switching characteristics and ease of use. Its typical applications include radio frequency (RF) signal processing, antenna switches, mobile radio, satellite communication and radar receiver applications.
The SMP1322-017LF is a 0.7mA, 33V Schottky barrier diode formed on a high frequency silicon substrate and is capable of a high frequency range of 1MHz - 500MHz. It features a low working voltage, good RF performance and a high power rating of 0.25 watts, making it suitable for a variety of applications. With a capacitance of 0.8pF, it is also capable of producing low distortion signals at frequencies up to 500MHz.
The SMP1322-017LF also offers several notable characteristics that make it a high performing device and attract users. One is its low insertion loss. This insertion loss reduces the amount of signal lost when it passes through multiple stages, hence maintaining a clear and distinct signal. Another is its +1dBm high interception point. This ensures that the signal reaches its max power over the entire operating frequency range, providing optimal performance. Moreover, it has a very low 1.17V forward drop, implying that it will not expend too much power when conducting RF signals.
The basic working principle of the SMP1322-017LF diode is simple. As an RF signal passes through the diode, electrons move from the source to the impedance of the diode. Then, because the diode is gate controlled, the impedance of the diode may be increased or decreased depending on the amount of current going through it. Thus, the SMP1322-017LF can be used as an RF switch, blocking or passing RF signals depending on the current going through it.
In conclusion, the SMP1322-017LF diode is a high performance device ideally suited for various high frequency applications and due to its high power rating and fast switching properties, it can provide users with reliable and efficiency performance. With its simple working principle and multiple applications, the SMP1322-017LF diode can offer a range of possibilities to help improve the performance of a range of RF circuits.
The specific data is subject to PDF, and the above content is for reference
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SMP15A-M3/85A | Vishay Semic... | 0.06 $ | 1000 | TVS DIODE 15V 24.4V DO220... |
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