| Allicdata Part #: | 863-1784-2-ND |
| Manufacturer Part#: |
SMP1331-040LF |
| Price: | $ 0.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Skyworks Solutions Inc. |
| Short Description: | PIN DIODE, SOD-882 |
| More Detail: | RF Diode PIN - Single 200V 250mW SOD-882 |
| DataSheet: |  SMP1331-040LF Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.18421 |
| 6000 +: | $ 0.17338 |
| 15000 +: | $ 0.16796 |
| 30000 +: | $ 0.16254 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | PIN - Single |
| Voltage - Peak Reverse (Max): | 200V |
| Capacitance @ Vr, F: | 0.35pF @ 30V, 1MHz |
| Resistance @ If, F: | 500 mOhm @ 100mA, 100MHz |
| Power Dissipation (Max): | 250mW |
| Operating Temperature: | -65°C ~ 150°C (TA) |
| Package / Case: | SOD-882 |
| Supplier Device Package: | SOD-882 |
Description
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TheSMP1331-040LFisastandardRFdiodeespeciallydesignedforwirelessapplications.Itischaracterizedbyits high reverse bias capacitance, enabling high frequency operation with tight tolerances. Commonly used in radiofrequency (RF) receivers and transmitters, the SMP1331-040LF is also suitable for general purpose RF signal diodes.This high-speed RF diode features a p-type substrate with an integrated resonator core, giving it excellent stability and high conversion efficiency. It has a reverse bias capacitance of 4 pF, and a forward capacitance of 3 pF. The forward voltage drop of the SMP1331-040LF is generally 1.5 V. It has a working frequency range of 2.4 GHz to 10.3 GHz, and an upper limit frequency of11GHz.In terms of its construction, theSMP1331-040LFismanufacturedinacomplextransistorstructureknownasanearnostrip-reducednitridecapacitator(ENRC)die. This ENRC die allows for high speed operation by leveraging N-type semiconductor materials and nanoscale tunneling junctions. The other major components of the SMP1331-040LF are an avalanche breakdown diode and a gate structure.The SMP1331-040LF has a wide range of applications, being used by manufacturersforwirelessconnectivitysolutions,radiosignaltransmission,andradar. It can be used in high frequency receivers, low noise amplifiers, oscillators, mixers, and up converters. Its high power handling capacity makes it suitable for base stations and transmitters for various communication networks.The working principle of the SMP1331-040LF is based on the electrical properties of the ENRC die. When the diode is connected in forward bias, an electric field is applied between the gate and drain terminals. This causes electrons to tunnel through the gate oxide layer at high speed. This in turn produces a strong current flow through the diode and hence results in an output voltage across the drain and source terminals.In the reverse bias condition, the SMP1331-040LF has a capacitance which can be tuned by adjusting the applied voltage across the diode. This is achieved by controlling the thickness of the gate oxide layer and using different materials as the dielectric stack layers. The increase in capacitance reduces the cut-off frequency and also allows the diode to operate in a wide frequency range.In conclusion, the SMP1331-040LF is a versatile high frequency RF diode which finds application in a wide range of wireless communication and radio frequency applications. Because of its high reverse bias capacitance and its ability to be tuned to various frequencies, this diode is ideal for applications where low noise, high speed, and reliability as important considerations.
The specific data is subject to PDF, and the above content is for reference
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