SMP1345-518 Allicdata Electronics
Allicdata Part #:

863-1105-2-ND

Manufacturer Part#:

SMP1345-518

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Skyworks Solutions Inc.
Short Description: DIODE PIN 50V 250MW 4MIS
More Detail: RF Diode PIN - Single 50V 150mA 250mW 4-MIS (1.18x...
DataSheet: SMP1345-518 datasheetSMP1345-518 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 150mA
Capacitance @ Vr, F: 0.285pF @ 10V, 1MHz
Resistance @ If, F: 2 Ohm @ 10mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: -65°C ~ 150°C (TA)
Package / Case: 4-SMD, No Lead
Supplier Device Package: 4-MIS (1.18x1.43)
Base Part Number: SMP1345-518
Description

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The SMP1345-518 is a diode device used in the field of radio frequency (RF) applications. It is an ultra-wideband Shottky barrier diode that is designed for use in RF attenuators, RF switches and converters, and high speed transmit/receive switching applications. The SMP1345-518 is a Schottky diode made of silicon and has an operating frequency range of DC to 18GHz. It has a low reverse leakage current and a high reliability rating which makes it suitable for use in high speed communication systems.

The SMP1345-518 is designed to minimize the signal distortion and signal loss during RF signal transmission. It is able to achieve this with its low capacitance and low noise characteristics. The device also has high power handling capability which makes it suitable for use in high performance RF applications. The SMP1345-518 is manufactured in a variety of package styles and is designed to satisfy a variety of customer requirements.

The SMP1345-518 working principle involves two important components: the Schottky diode and the interconnecting wires. The Schottky diode works by creating a depletion region, which is an electron-filled volume which is between the junction of the semiconductor material. The electrons in the depletion region are attracted to the area, creating a type of p–n junction. This p–n junction works by allowing current to cross in one direction only, preventing reverse currents. This ensures that the signal remains consistent even when high and varying voltage levels are used.

The interconnecting wires are important to the working principle of the SMP1345-518. The wires act as an antenna, sending and receiving RF signals. The length and configuration of the wires will have an effect on the signal characteristics and performance of the SMP1345-518. The right configuration of the wires can help optimize the performance of the device.

The SMP1345-518 is an important device for the radio frequency (RF) applications. It minimizes the signal distortion and loss in RF signal transmission and has a high power handling capability. It is designed to meet different customer requirements and is manufactured in a variety of package styles. With its low capacitance, low noise, and high reliability, the SMP1345-518 is a reliable option for RF applications.

The specific data is subject to PDF, and the above content is for reference

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