Allicdata Part #: | 863-1126-2-ND |
Manufacturer Part#: |
SMS7630-093 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Skyworks Solutions Inc. |
Short Description: | DIODE SCHOTTKY 1V 0201 |
More Detail: | RF Diode Schottky 1V 0201 |
DataSheet: | SMS7630-093 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - Peak Reverse (Max): | 1V |
Capacitance @ Vr, F: | -- |
Resistance @ If, F: | -- |
Operating Temperature: | -- |
Package / Case: | 0201 (0603 Metric) |
Supplier Device Package: | 0201 |
Base Part Number: | SMS7630-093 |
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Diodes - RF
The SMS7630-093 is a high power RF diode. This device is applied in antennas, amplifying and modulating the transmit or receive signals. In most applications, these diodes are used in microwave transmitting amplifiers or in parametric amplifiers with high power and maximum efficiency. Knowing the application field and working principle of the SMS7630-093 is crucial in order to make an informed decision when selecting the right diode for a given application.
Application field of the SMS7630-093
The SMS7630-093 diode can handle up to 100W of power with a bandwidth up to 10GHz and operates in the frequency range of 8.2 to 12.4GHz. This means it is ideal for:
- High power microwave transmitters up to 10GHz bandwidth
- High power amplifiers in low-noise amplifier (LNA) designs
- Parametric amplifiers with high power and efficiency
- Antennas for transmitting and receiving radio signals
- Artificial magnetic materials for radar applications
The SMS7630-093 has a low noise figure, making it well-suited for preamplifier and LNA designs. Its excellent gain uniformity and low-to-medium output distortion makes it ideal for use in radio transmitters. The device also features a low intermodulation (IMD) slope and high IP3, making it especially reliable for high-precision communications applications.
Working principle of the SMS7630-093
The SMS7630-093 diode works using a PN junction. This junction is formed by placing a piece of n-type semiconductor material alongside a piece of p-type semiconductor material. Due to the nature of the semiconductor materials involved, when a voltage is applied through the junction, current can flow in either direction, making the SMS7630-093 a highly ideal device for linear amplification or modulation.
The SMS7630-093 is equipped with a control gate. This gate is used to control the amplitude of the input signal current and voltage. When the gate is at a positive potential relative to the case, the gate is said to be "on"; when it is at a negative potential relative to the case, the gate is said to be "off". This allows the user to precisely control the gain and frequency response of the diode.
The SMS7630-093 diode also features a bypass circuit, which allows the control gate to be bypassed at certain frequencies. This is useful for applications that require a flatter frequency response, such as wireless communications systems.
The SMS7630-093 is a versatile and reliable RF diode, capable of withstanding high power levels with excellent gain uniformity. Its low noise figure and bypass circuit make it ideal for applications where maximum efficiency and accuracy are required.
The specific data is subject to PDF, and the above content is for reference
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