SMSA7630-061

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky - Single
Voltage - Peak Reverse (Max):	--
Current - Max:	50mA
Capacitance @ Vr, F:	0.2pF @ 150mV, 1MHz
Resistance @ If, F:	--
Power Dissipation (Max):	75mW
Operating Temperature:	-65°C ~ 150°C (TA)
Package / Case:	0201 (0603 Metric)
Supplier Device Package:	0201

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The SMSA7630-061 is a RF (Radio Frequency) diode capable of switching high frequency signals in the range of 532 MHZ to 1250 MHz. It is a surface mount diode manufactured using gallium arsenide (GaAs) material, and is commonly found in wireless communications applications.The SMSA7630-061 diode offers many unique features which make it suitable for a variety of applications. It has an operating temperature range of -40°C to +85°C, and an operating voltage of 85 V RMS. The power dissipation rating is 1.5 W, and the storage temperature is -65°C to +85°C. It is rated to handle a maximum forward power of 4.5 dBm.The SMSA7630-061 diode has a maximum gain of 10.3 dB and a maximum directivity of 17.2 dB. It also has an insertion loss of 1.4 dB and a load impedance of 50 ohms. Its common mode isolation is 42 dB, and its reverse isolation is 25 dB. Finally, it has a response time of 200 ns.The SMSA7630-061 diode is a general-purpose switching device used in various RF applications such as radios, satellite receivers, and cable systems. It is used to switch between different frequency channels and can be used to provide superheterodyne and IF switching functions.The working principle of the SMSA7630-061 diode is based on the PN junction. PN junction diodes have two regions, the P-region which consists of holes, and the n-region which consists of electrons. When a forward bias is applied to the junction, a certain amount of current flows through the device. This current consists of majority carriers which flow more easily than minority carriers. This causes the majority carriers to “sweep out” the minority carriers, creating a low resistance region.The SMSA7630-061 diode works in a similar way. When a voltage is applied to the diode, a small amount of signal current passes through it. This creates an amplified signal due to the large gain of the device. This in turn produces a large signal at the output, which is then used for switching.The SMSA7630-061 diode also has excellent frequency response and noise characteristics, making it ideal for RF applications. It is also quite cost-effective compared to other RF diode switches. The SMSA7630-061 diode is an ideal choice for switching applications in radio systems, satellite receivers, and cable systems.

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