SMSD1002T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Frequency - Transition:	--
Operating Temperature:	--
Mounting Type:	--
Package / Case:	--
Supplier Device Package:	--

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The SMSD1002T1G is a single bipolar junction transistor (BJT) packaged in a medium-power plastic surface-mountable package (SOT-23). The device features low-profile, low-power surface mount, fast switching speeds and low gate charge. It is suitable for many applications such as drive circuits for small motors and power switches.

Application Field

SMSD1002T1G is typically used for electronics engineering and consumer applications, such as low-side switches, driver circuits for relays, solenoids and small motors. Its fast switching speed and low gate charge make it suitable for high speed switching applications.For automotive applications, SMSD1002T1G can be used as the power switches to control the multiple loading current and pulse width modulation(PWM) applications such as HVAC control and motor control.Due to its low power dissipation, it can be used as a Head-up Display and side mirror heaters. Other automotive applications include mirrors/windows actuator, door lock/lift gate, parking brake, and DC/DC converter applications.For Power Management applications, SMSD1002T1G can be used in battery chargers, uninterruptible power supplies, and motor driver applications such as solar water pumps.The SMSD1002T1G can also be used in various consumer and industrial applications such as cell phones, game consoles, DVD players, office automation, and medical equipment.

Working Principle

SMSD1002T1G is a single bipolar junction transistor. It is an n-type device, meaning it consists of an n-type base layer(n+) and an n-type emitter layer(n-). The electrons move from the base layer to the emitter layer and are collected by the collector. The number of electrons highest in the collector when the device is operating at saturation. The transistor can be used as a switch by controlling the collector-emitter current flowing through the device. An ideal BJT switch will conduct current when a small voltage is applied to the base terminal, and cut off current when the voltage applied to the base terminal is removed. In an actual BJT switch, the current can be controlled by applying a small base current to the device. By adjusting the base current, the amount of collector current will also be adjusted. When the base current is set to a high enough level, the collector current is at its maximum, and the device will be fully conducting. When there is no base current, the device will be off and no collector current will flow.SMSD1002T1G features low gate charge which helps to reduce switching losses. This feature makes it ideal for high speed switching applications. Also, the package is small size with low power dissipation, making it suitable for surface-mountable applications.

Conclusion

The SMSD1002T1G is a single bipolar junction transistor (BJT) packaged in a medium-power plastic surface-mountable package. It is suitable for many applications such as drive circuits for small motors and power switches. It can also be used for unrelated applications such as Head-up Display and mirrors/windows actuator. The working principle of the device is that electrons move from the base layer to the emitter layer and are collected by the collector. The device can be used as a switch by controlling the collector-emitter current with a small base current. The fast switching speeds and low gate charge make it suitable for high speed switching applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description