Allicdata Part #: | SMZG3799A-E3/5B-ND |
Manufacturer Part#: |
SMZG3799A-E3/5B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 27V 1.5W DO215AA |
More Detail: | Zener Diode 27V 1.5W ±10% Surface Mount DO-215AA (... |
DataSheet: | SMZG3799A-E3/5B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 27V |
Tolerance: | ±10% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 23 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 20.6V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-215AA, SMB Gull Wing |
Supplier Device Package: | DO-215AA (SMBG) |
Base Part Number: | SMZG3799 |
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SMZG3799A-E3/5B is a single zener diode which is commonly used in a variety of different applications. It is a 3.0V zener diode with a maximum power dissipation of 375mW and is available in both axial and SMD packages. The SMZG3799A-E3/5B is especially well suited for use in power supplies and voltage regulation applications, such as switching power supplies, battery powered devices, and automotive applications.
The working principle of the SMZG3799A-E3/5B is relatively straightforward. It relies on the properties of a Zener diode which include a high reverse breakdown voltage and low junction capacitance. Zener diodes are constructed in such a way that they are able to withstand high voltages without breaking down, which makes them ideal for voltage regulation applications. The reverse breakdown voltage of the SMZG3799A-E3/5B is 3.0V. As the input voltage reaches 3.0V, the diode then begins to conduct current and the output voltage is maintained at 3.0V which makes it ideal for use in power supplies and voltage regulation applications.
The SMZG3799A-E3/5B is also capable of providing protection from voltage transients and spikes that occur in power applications. This is due to the reverse recovery time of the diode, which is the time it takes for the diode to switch from its reverse breakdown state to an off state after the voltage has dropped below the breakdown voltage. The SMZG3799A-E3/5B has a reverse recovery time of 10ns, which provides adequate protection from voltage transients and spikes.
The SMZG3799A-E3/5B is also well suited for use in low noise and RF applications due to its low junction capacitance. Junction capacitance is a key factor in the performance of diodes in RF circuits, and the SMZG3799A-E3/5B has a junction capacitance of 5pF, which is significantly lower than many other diodes. This allows the SMZG3799A-E3/5B to be used in low noise and RF applications without introducing additional noise into the circuit.
The SMZG3799A-E3/5B is a versatile diode that can be used in a variety of different applications. Its low junction capacitance, fast reverse recovery time, and high reverse breakdown voltage make it ideal for use in power supplies, voltage regulation, low noise, and RF applications. It is available in both axial and SMD packages, and can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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