SNRVBD660CTT4G Discrete Semiconductor Products |
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Allicdata Part #: | SNRVBD660CTT4GOSTR-ND |
Manufacturer Part#: |
SNRVBD660CTT4G |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ARRAY SCHOTTKY 60V 3A DPAK |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 60V 3A ... |
DataSheet: | SNRVBD660CTT4G Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.31580 |
5000 +: | $ 0.30076 |
Series: | SWITCHMODE™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60V |
Current - Average Rectified (Io) (per Diode): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 700mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 60V |
Operating Temperature - Junction: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MBRD660CT |
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Diodes are among the most commonly used semiconductor devices. They are primarily used as switches or rectifiers in electronic circuits due to their ability to control the direction of current. A rectifier is a device that converts AC power to DC power, making it suitable for use in digital circuits and DC motors. Arrays are multiple diodes combined into one package with a common ground. The SNRVBD660CTT4G is a diode rectifier array manufactured by STMicroelectronics. This article will discuss the application field and working principle of the SNRVBD660CTT4G.
The SNRVBD660CTT4G is a 600 V, ten channel, 4 A single phase bridge rectifier array. It is designed for AC to DC bridging applications, such as uninterruptible power supplies and energy-saving appliances. It features low forward voltage drop (Vf) of 1.1 V, low reverse recovery time (trr) of 15 ns and low average forward current (Io) of 3.2 A. It has common-anode configuration and includes integrated heat sink to enhance power dissipation. The device is also compliant with environmental and safety standards such as JEDEC 040x server specifications and EN 60320 safety requirements. The integrated MOSFETs provide over-temperature protection and ESD protection of up to 8 kV.
The SNRVBD660CTT4G consists of ten channels in a single package, each featuring two Schottky rectifiers connected in a common-anode configuration. The Schottky rectifiers are controlled by a pair of internal MOSFETs and feature on-state resistance of 2 mOhms. The high voltage MOSFETs are connected in reverse parallel and are optimized to pass Rds(on) up to 200 mOhms. The device is packaged in an SO8 form factor and is able to operate at ambient temperatures ranging from -40 °C to +125 °C.
To ensure safe and efficient operation, the SNRVBD660CTT4G includes integrated circuitry that monitors current and temperature. In the event of over-temperature, the device will automatically cease operation and reduce the voltage to a safe level. The integrated MOSFETs also offer ESD protection of up to 8 kV, ensuring that the connection between the device and the circuit remains safe even in the event of a static discharge.
To sum up, the SNRVBD660CTT4G is a ten channel, 4 A single phase bridge rectifier array designed for AC to DC bridging applications. It is designed to operate at voltages ranging from 600 V and temperatures from -40 °C to +125 °C. In addition, the device includes integrated circuitry to monitor current and temperature, as well as integrated MOSFETs providing ESD protection of up to 8 kV. It is an ideal choice for uninterruptible power supplies and energy-saving appliances.
The specific data is subject to PDF, and the above content is for reference
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