SO642 Allicdata Electronics

SO642 Discrete Semiconductor Products

Allicdata Part #:

497-4650-2-ND

Manufacturer Part#:

SO642

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 300V 0.1A SOT23
More Detail: Bipolar (BJT) Transistor NPN 300V 100mA 50MHz 310m...
DataSheet: SO642 datasheetSO642 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 310mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: SO642
Description

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The SO642 application field is mainly for use in fast logic circuits in high speed, low power applications and for cloud computing components. It can also be used in other data intensive applications such as in internet of things, artificial intelligence and big data analytics. Additionally, it is well suited for digital signal processing and industrial automation applications. The SO642 is a single bipolar junction transistor (BJT) developed by Sanken, a Japanese company. It has a high speed and a low power capability. This makes the device an ideal choice for use in fast logic circuits.

The SO642 is a depletion-mode extended collector transistor with a built in emitter protection. This protection feature helps to reduce the effect of noise and switching spikes on the circuit. It also helps to provide more reliable operation and faster response times. The SO642 has a collector current rating of 77 mA and a collector-emitter voltage rating of 170 V. This transistor can provide a frequency range from DC to 8 MHz. The SO642 is available in a variety of package types including DPAK-3, SOT-23-3, and SOT-223.

The SO642 can be used in a variety of digital logic circuits including AND gates, OR gates and multiplexers. It is also well suited for circuits with high frequency operation such as pulse and shift circuits. The device works best when powering digital logic circuits with a supply voltage of 5V. The transistor has a hFE (current gain) between 44-47 up to a collector current of 15mA. This range of gains helps to provide good reproducibility in the circuit performance.

The working principle of the SO642 is based on the PN junction of the bipolar junction transistor. The device is constructed of two layers of silicon or germanium which form the PN junction. A small base terminal is applied to the junction to control the current that flows through it. The base current is proportional to the collector current, which varies depending on the voltage applied to the base. The collector voltage is then determined by the voltage applied to the emitter terminal and the current that is flowing in the collector circuit. This allows the device to amplify and switch the applied voltage so it can be used in digital logic and power switching applications.

In conclusion, the SO642 is an ideal choice for fast logic circuits and other digital switching applications. The depletion-mode extended collector transistor provides reliable protection against noise and switching spikes while still providing good reproducibility in the circuit performance. The transistor can be used in a variety of package types and operates best with a supply voltage of 5V. It has a hFE of 44-47 at collector current of 15mA. This allows for good control of the current flow in the circuit and helps to achieve the desired performance of the logic circuit. The SO642 is a great choice for those looking for a low power and high speed BJT device.

The specific data is subject to PDF, and the above content is for reference

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