| Allicdata Part #: | F2893TR-ND |
| Manufacturer Part#: |
SP1001-02JTG |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Littelfuse Inc. |
| Short Description: | TVS DIODE 5.5V 13V SC70-3 |
| More Detail: | N/A |
| DataSheet: | SP1001-02JTG Datasheet/PDF |
| Quantity: | 27000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Voltage - Clamping (Max) @ Ipp: | 13V |
| Supplier Device Package: | SC-70-3 |
| Package / Case: | SC-70, SOT-323 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 125°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | Automotive |
| Power Line Protection: | No |
| Power - Peak Pulse: | -- |
| Current - Peak Pulse (10/1000µs): | 2A (8/20µs) |
| Series: | Automotive, AEC-Q101, SP1001, SPA® |
| Voltage - Breakdown (Min): | 7V |
| Voltage - Reverse Standoff (Typ): | 5.5V (Max) |
| Unidirectional Channels: | 2 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
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The SP1001-02JTG is a commonly used TVS - Diodes, which is designed for applications such as data and signal lines dependent on reliable transient protection. As commonly found in circuit protection, TVSs can protect both against direct and indirect lightning/surge, ESD and ground fault currents. Consequently, the device is widely used in medical, industrial, communication and consumer industries, both for data and power line protection.
The SP1001-02JTG is a unidirectional protector designed using a single pair of silicon avalanche surge protector (SASP) diodes installed in a single-line SOD-123FL package. It is the perfect low-power solution for data and signal line protection, and it features a low-clamping voltage of 6.3 V, a peak pulse power rating of 270 W (tP=8/20μs) and a maximum current capability of 1.5 A.
The working principle of the SP1001-02JTG TVS diode is found in the widely used avalanche breakdown (AB) mechanism. This mechanism makes use of the increase in voltage in order to cause a current surge within the device. The avalanche breakdown mechanism begins when the voltage applied to the device exceeds the AVBR - avalanche breakdown voltage. During this time, electrons are driven more quickly and hit the atoms in the silicate layer of the diode enough times to break them down, releasing even more electrons.
A n-type silicon diode has two pn- junctions – anode and cathode. As the applied voltage exceeds the breakdown voltage, and the avalanche breakdown process is initiated, the avalanche current flows through the anode-cathode. This avalanche current increases rapidly and the device begins to act like a low impedance current source. This causes a sharp voltage drop, or clamping of the voltage waveforms. When the voltage has decreased to a certain level, the device returns to its high-impedance, reverse-bias levels.
The SP1001-02JTG has a high surge current capability with a fast response time and a low operating temperature. It is optimized for minimal losses at low pulse powers, as well as maximum power at higher pulse powers. The device is compatible with standard lead-free production and soldering processes, and can be provided in any quantity needed.
The SP1001-02JTG is a single line thunder protection device with a SOD-123FL package, optimized for 3V to 5.5V applications and used for data and signal protection. It is designed to protect against Electrostatic Discharge (ESD), lightning/surge and ground fault current, making it the ideal device for data and signal line protection. This device is easily available, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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SP1001-02JTG Datasheet/PDF