SR209HB0G

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Diodes - Rectifiers - Single

SR209HB0G is a kind of rectifier diodes in the single type that is designed to offer a performance that is highly reliable with low forward voltage drop and excellent stability. This type of semiconductor diode is ideal for rectification of high-frequency signals because it can convert alternating-current to direct-current. It also provides high efficiency, temperature range and low leakage current.

Application Field

The SR209HB0G is primarily used in a wide variety of applications such as telecommunications, automotive, industrial, and consumer electronics. This diode is highly suitable for circuits that require precise timing or switching with fast recovery time. With its low forward voltage drop and low leakage current, it can be used in high-frequency switching such as rectification and phase control. It is also often used in reverse bias protection and transient suppression circuits.

Working Principle

The SR209HB0G works by controlling the flow of electricity between two terminals, with one of them being the anode and the other one the cathode. Depending on the direction of the current and applied forward voltage, the diode operates in four possible modes. The forward conduction mode is when the diode allows electric current to pass through, acting as a switch that is turned on. In the opposite direction, in the reverse conduction mode, the diode would act as a switch that is turned off, blocking the passage of electric current.

The elements of the SR209HB0G are made from highly doped semiconductor material, forming different ‘regions’ that have different electrical properties. This makes the diode have a ‘junction’ between them. When the anode is connected to a power source and the gate is connected to the cathode, the diode will become conductive if the right voltage is applied and current starts to flow. The current will then drift hermetically to the anode while a potential is established between the two terminals.

The reverse-bias mode is when the diode is exposed to a voltage higher than the threshold voltage. The voltage bias pulls the electrons away from the junction, resulting in the blocking property of the diode and no current is allowed to pass through.

In the last mode, which is called avalanche breakdown, the diode is exposed to a reverse voltage that is far higher than the threshold. This will produce a current surge that will cause the junction to break down and all insulation between the terminals is removed, allowing the current to pass through in the reverse direction.

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