Allicdata Part #: | SR503HR0G-ND |
Manufacturer Part#: |
SR503HR0G |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 30V 5A DO201AD |
More Detail: | Diode Schottky 30V 5A Through Hole DO-201AD |
DataSheet: | SR503HR0G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.09884 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 550mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 125°C |
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Diodes – Rectifiers – Single
There are a wide variety of diodes on the market, each suited to a specific application. The SR503HR0G is a single rectifier with a range of features that make it ideal for many different uses. This article will discuss the application field and working principle of the SR503HR0G.
The SR503HR0G is a medium-power Schottky diode with a maximum forward voltage of 0.4V and a maximum reverse current rating of 5A. It has a series resistance (RSA) of 0.050Ω and a capacitance forward voltage of 120nF. This diode is designed for use in a variety of applications, including high voltage DC power supplies, rectifier circuits, and switching circuits. In addition, this diode also has a high surge carrying capacity and is suitable for use in applications with high transient voltages.
The SR503HR0G features a Uni-directional conductivity, meaning that current only flows in one direction. This is an important feature as it prevents the voltage from flowing between two different points in the circuit. This allows the voltage to remain stable at both the input and the output of the circuit. Furthermore, the SR503HR0G also offers a short reverse recovery time, which helps to reduce losses in the circuit when switching between two different voltages.
The working principle of the SR503HR0G is based on the PN junction behavior. The diode consists of two sections, the P and N layers. The P layer is composed of a semiconductor material and is negative doping, meaning that it has a negative charge. The N layer is composed of a semiconductor and is positive doping, meaning that it has a positive charge. The junction between the two layers is referred to as the Schottky barrier. This junction has a voltage drop, known as the Schottky barrier voltage.
When a potential difference is applied across the PN junction, it causes a current to flow through the diode, which is referred to as the forward current. This forward current is limited by the diode’s maximum forward voltage. The reverse current, which is the current that flows from the P layer to the N layer, is blocked by the Schottky barrier voltage. This is because the barrier voltage prevents the flow of reverse current from the P layer to the N layer.
The SR503HR0G is an ideal diode for applications such as high voltage DC power supplies, rectifier circuits, and switching circuits. Its unidirectional conductivity ensures stability in the circuit and its short reverse recovery time helps to reduce losses. Its medium power rating and capacitance forward voltage make it suitable for many different uses.
The specific data is subject to PDF, and the above content is for reference
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