| Allicdata Part #: | SRA20100C0G-ND |
| Manufacturer Part#: |
SRA20100 C0G |
| Price: | $ 0.40 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE SCHOTTKY 100V 20A TO220AC |
| More Detail: | Diode Schottky 100V 20A Through Hole TO-220AC |
| DataSheet: | SRA20100 C0G Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.36118 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 20A |
| Voltage - Forward (Vf) (Max) @ If: | 920mV @ 20A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 100µA @ 100V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 |
| Supplier Device Package: | TO-220AC |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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The SRA20100 C0G is a type of single rectifier diode commonly used in a range of electrical and electronics applications. It features a package style that is small and convenient to use and low forward voltage drop to ensure efficient operation. The device is designed to provide high-frequency switching applications, such as power supply rectification and motor control. It is also suitable for reverse current protection and stabilization in various applications.
The SRA20100 C0G is manufactured by Vishay and is a diodes type of the Schottky Barrier Rectifier family. It is constructed from an aluminum indium gallium phosphide (AlGaInP) junction with a very low forward voltage drop, making it a very efficient device in operation. The device also has a very low reverse leakage current, making it extremely reliable and offering superior control when reverse current protection is required. It has a storage temperature of up to 150°C and an operating temperature range of -55°C to 125°C.
The working principles of the SRA20100 C0G are based on its physical design. The device consists of an anode and a cathode connected via a metal-oxide-semiconductor Field-Effect Transistor (MOSFET). When a forward voltage is applied across the anode and the cathode, current flows through the MOSFET, creating a field that forces the electrons in the semiconductor material to flow in the appropriate direction. The electrons then flow across the junction and thereby cause current to flow through the device.
The SRA20100 C0G is well suited for applications that require high-frequency switching and reverse current protection. It is both reliable and efficient, making it a great choice for power rectification, motor control and a range of other applications. It is suitable for use at operating temperatures of up to 150°C and can be used in a range of device packages.
The specific data is subject to PDF, and the above content is for reference
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SRA20100 C0G Datasheet/PDF