SRAS850 MNG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	50V
Current - Average Rectified (Io):	8A
Voltage - Forward (Vf) (Max) @ If:	700mV @ 8A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	100µA @ 50V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AB (D²PAK)
Operating Temperature - Junction:	-55°C ~ 150°C

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SRAS850 MNG Application Field and Working PrincipleThe SRAS850 MNG (microwave enabled gate) is a high-power field effect transistor (FET) rectifier based on GaAs technology and is used in a variety of applications. This technology provides higher operating efficiency and power density than traditional rectifier devices such as standard Schottky diodes. When used in applications that involve signals in the low-gigahertz range, the SRAS850 MNG provides a far better performance than most other rectifiers in the market by utilizing less power and providing a higher level of signal integrity.The SRAS850 MNG is particularly suited for applications in RF communications including base station and CATV systems, as well as mobile communications, digital recording and other similar applications where a large amount of signal fidelity is required. The ability of the SRAS850 MNG to work in the low-gigahertz frequency range has also made it a great choice for applications where fast signal processing between multiple devices is needed.The SRAS850 MNG is also known as a PIN diode or dual-gate MOSFET rectifier and uses a pair of field effect transistors (FETs) and a PIN Diode. This technology allows the SRAS850 MNG to act as a voltage regulator, providing fast, reliable and precise regulation of the output voltage when used in single-phase or three-phase applications.The working principle of the SRAS850 MNG device involves the FETs being biased with a voltage and current of desired levels and then allowing a signal to be passed through them. This signal is then rectified by the PIN diode, which converts it into a direct current (DC) and allows the device to regulate the output voltage level. Also, when a high-frequency signal is used, the SRAS850 MNG works as a high-pass filter and helps to limit any high-frequency noise and crosstalk incidents.Due to its high-frequency broadband capability, relatively low on-resistance and low voltage-drop, the SRAS850 MNG is able to provide a reliable and efficient operation, which is perfect for applications involving high-gigahertz frequencies. Furthermore, the SRAS850 MNG also utilizes high-frequency components to ensure that the device has minimal power consumption, making it very energy-efficient. The SRAS850 MNG is available in several different packages, including dual-in-line (DIP), Quad Flat No-Lead (QFN) and thin-profile QFN (TPQFN) packages. This ensures that the SRAS850 MNG will fit into any desired circuit with ease. Overall, the SRAS850 MNG is an excellent choice for applications that require signal integrity, high-frequency broadband capability and a low-voltage drop. Its high power efficiency enables it to be used in a variety of RF and digital applications, as well as in single-phase and three-phase applications, and its four package options ensure it will fit into any desired circuit. Its wide range of features and capabilities make it the perfect choice for any application where signal fidelity is a must.

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