
SS13-TP Discrete Semiconductor Products |
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Allicdata Part #: | SS13-TPTR-ND |
Manufacturer Part#: |
SS13-TP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE SCHOTTKY 30V 1A DO214AC |
More Detail: | Diode Schottky 30V 1A Surface Mount DO-214AC (SMA) |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.03969 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 550mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 125°C |
Base Part Number: | SS13 |
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Introduction
SS13-TP is an advanced rectifier diode (also known as a fast recovery diode) which utilizes a new technology known as Avalanche uni-junction device. The SS13-TP rectifier diode is an SRS (static rectifier system) diode which is widely used in fast transient applications and AC-DC rectification circuits.
Field Of Application
The SS13-TP is designed for applications up to 100V VDS, where low forward voltage is critical and high reliability is essential. These diodes are used in many applications including switching power supplies, computers, communication and control equipment, motor control and AC-DC motor drives. This diode can be used to provide voltage regulation and current limitation to control the surge current in AC-DC applications. It can also be used in applications that require low forward voltage, such as Power supplies, Solar Cell applications, lighting and other power control circuits. Other applications include Snubber and Hard Clamp circuits, AC-DC synchronous/resonant converters, Flyback converters and active rectification circuits.
Working Principle
The working principle of the SS13-TP diode is based on the breakdown of the avalanche uni-junction device. As a forward biased diode, the p-type semiconductor material will become charged to the reverse voltage breakdown voltage (VBR). This can result in additional charge carriers, which will then increase the current flow in the forward direction and reduce the forward voltage. This breakdown voltage can be adjusted with a control voltage input, giving the diode more flexibility for different applications. When the diode is reverse biased, the avalanche effect of the breakdown is not triggered and the diode blocks the current. The main advantage of the SS13-TP diode is that it is capable of providing high switching rates without the need for a snubber circuit. This makes it more energy efficient and more reliable than other fast recovery rectifier diodes.
Conclusion
The SS13-TP diode is a new silicon avalanche rectifier diode that can be used in many fast rectification applications. It has a low forward voltage drop and is capable of providing high switching rates without the need for a snubber circuit, making it more energy efficient and reliable than other fast recovery rectifier diodes. The control voltage input allows the breakdown voltage to be adjusted, giving the diode more flexibility for different applications. It is a versatile diode which is widely used in power supplies, motor control, communications, solar cell applications and other AC-DC rectification circuits.
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