SS15-E3/61T Allicdata Electronics
Allicdata Part #:

SS15-E3/61TGITR-ND

Manufacturer Part#:

SS15-E3/61T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 50V 1A DO214AC
More Detail: Diode Schottky 50V 1A Surface Mount DO-214AC (SMA)
DataSheet: SS15-E3/61T datasheetSS15-E3/61T Datasheet/PDF
Quantity: 7200
Stock 7200Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 50V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: SS15
Description

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Diodes - Rectifiers - Single: SS15-E3/61T Application Field and Working Principle

Diodes – rectifiers – single are electronic parts that are used to allow electrical current to flow in one direction. The SS15-E3/61T Schottky Diode, specifically, is a single-phase rectifier noted for its low voltage drop and high forward current. It is a versatile component, since it can handle high-frequency switching and is suitable to be used in power supplies, ultra-fast switching application, reverse leakage protection, EMI, filtering and other general-purpose rectification. The SS15-E3/61T Diode is a fast switching, general-purpose rectifier. It is constructed with a metal–semiconductor junction, making it a Schottky Rectifier. Through this Schottky design, it can reach up to 200V for blocking voltages and up to 15A for forward continuity. It also features an avalanche-breakdown diode performance, which protects against reverse leakage.The working principle of the SS15-E3/61T Diode is based on the principle of PN junction diode. Basic PN junction is formed by semiconductor materials, in which P-type material is sandwiched between two N-type materials. In a Schottky Diode, the junction is formed at the metal-semiconductor interface. In this case, electrons are the majority carrier, so the depletion region is not a factor. Instead, a depletion region is created when the positive voltage of the anode is compared to the negative voltage of the cathode.When forward biased, current flows from the anode to the cathode of the diode. In this condition, the diode acts like a closed switch by allowing current to pass through it. Conversely, when the diode is reverse biased, there is no electric current flow through the diode due to the depletion region. Hence, it effectively acts like an open switch. The less electric current which flows to the diode, the more control is needed.Due to its low voltage drop and fast switching capability, the SS15-E3/61T Diode is ideal for use in power supplies, ultra-fast switching applications, reverse leakage protection, EMI filtering, and other general-purpose rectification. Moreover, it is a package with low thermal resistance, making it suitable for applications where a high amount of current-carrying capability and high switching speed are essential. In conclusion, the SS15-E3/61T Schottky Diode is a single-phase rectifier noted for low voltage drop and high forward current. It is a versatile component, due to its ability to handle high-frequency switching and suitable to be used in power supplies, ultra-fast switching application, reverse leakage protection, EMI, filtering and other general-purpose rectification. It works by allowing electric current to flow in one direction when forward biased, and no current to flow when reverse biased. It is a very economical component and can easily be combined with other electronic components for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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