SS26-LTP Allicdata Electronics
Allicdata Part #:

SS26-LTPMSTR-ND

Manufacturer Part#:

SS26-LTP

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE SCHOTTKY 2A 60V SMA
More Detail: Diode Schottky 60V 2A Surface Mount DO-214AC (SMA)
DataSheet: SS26-LTP datasheetSS26-LTP Datasheet/PDF
Quantity: 5000
5000 +: $ 0.06522
10000 +: $ 0.05947
25000 +: $ 0.05564
50000 +: $ 0.05116
Stock 5000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Description

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SS26-LTP (Low Threshold Power) diodes are widely used in consumer electronics, automotive, industrial, and communication applications. These diodes provide a low forward voltage drop and low reverse leakage current. They are available in surface-mount, through-hole and ultra-miniature packages including SMT lead pitches of 0.5mm, 0.65mm and 0.8mm. The SS26-LTP is a single diode rectifier that has a very low forward voltage drop and a very low reverse leakage current.

The SS26-LTP diodes are used in a wide range of applications that require high efficiency, such as switching power supplies. They can also be used in circuit protection and current limiting applications. Furthermore, these diodes are also used in battery charging and discharging applications.

The working principle of an SS26-LTP diode is based on the PN junction between two different semiconductor materials. When positive voltage is applied to the anode, current will flow through the PN junction and the diode will become forward-biased. The forward voltage drop of the diode is determined by the type of semiconductor material and the doping level. Additionally, the leakage current is determined by the reverse bias applied to the diode and the thermal characteristics of the PN junction.

In a reverse bias situation, the PN junction prevents current flow. This is why the SS26-LTP diodes are used in switching power supplies to prevent the current from going into the wrong direction during the off-state of the switch. Furthermore, the leakage current of the SS26-LTP diodes is very low, which makes them suitable for use in applications where low power dissipation is required.

In addition, the SS26-LTP diodes also work to reduce electromagnetic interference (EMI). This is done by clamping instantaneous spikes and surges of the input signal. EMI can cause malfunctions in a circuit, so clamping the input signal helps to reduce the risk of circuit malfunctions.

Finally, the SS26-LTP diodes can be used for heat dissipation. They can dissipate heat generated by the circuit and prevent overheating. This is particularly important in high precision and high power applications, where overheating can cause the destruction of the circuit.

Overall, the SS26-LTP diodes have many advantages and are used in a wide range of applications. They have a very low forward voltage drop and a very low reverse leakage current. Furthermore, they are used for current limiting, circuit protection, and heat dissipation. Additionally, they can reduce the risk of circuit malfunctions due to EMI. The SS26-LTP diodes are therefore an essential part of many different circuits.

The specific data is subject to PDF, and the above content is for reference

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