SS26LW RVG Allicdata Electronics
Allicdata Part #:

SS26LWRVGTR-ND

Manufacturer Part#:

SS26LW RVG

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE SCHOTTKY 60V 2A SOD123W
More Detail: Diode Schottky 60V 2A Surface Mount SOD123W
DataSheet: SS26LW RVG datasheetSS26LW RVG Datasheet/PDF
Quantity: 9000
3000 +: $ 0.05557
6000 +: $ 0.05001
15000 +: $ 0.04445
30000 +: $ 0.04167
75000 +: $ 0.03704
Stock 9000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD123W
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The SS26LW RVG is a single rectifier diode with a low forward voltage drop. It is an ideal choice for applications where high current handling capacity is required, such as in automotive applications, batteries, and general purpose applications. The design of this device makes it well-suited for high-drain applications.

The diode is constructed from a silicon epitaxial layer on a substrate and housed in a SOT-23-2L surface mount package. The diode has a low horn drop of 0.65-0.75 V and can handle currents up to 1 A. The forward voltage drop is further reduced when the diode is operated at temperatures of 70 ⁰C. This makes it ideal for use in automotive applications, where high current draw is required while operating in extreme temperatures.

The SS26LW RVG has an avg. forward current of 1 A and an maximum current of 10 A. It has a storage temperature range of -65 to +150 ⁰C and a junction temperature range of -65 to +150 ⁰C. It is also RoHS compliant, making it an ideal choice for high-drain applications. It is capable of blocking voltage up to 600 V before avalanche breakdown.

The working principle of the SS26LW RVG is the same as any other diode device. When the diode is forward biased, a large current is conducted through it, allowing for low forward voltage drop. When reverse bias is applied, the current flowing through the diode drops, and it becomes a high resistance element. The reverse leakage current is small and a typical characteristic of the SS26LW RVG.

The SS26LW RVG is particularly suitable for applications in which high current can be handled in extreme ambient and junction temperatures. The diode\'s low forward voltage drop, low horn drop, and high current handling make it an ideal choice for automotive applications, where high current draw is required.

The SS26LW RVG is designed to be used in high-drain applications and is also RoHS compliant. Its low horn drop, high current handling capacity, and blocking voltage capability make it a capable device for many applications. Its low forward voltage drop and availability in an SOT-23-2L package make it easy to integrate into other systems.

The specific data is subject to PDF, and the above content is for reference

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