SS29HE3_A/H Allicdata Electronics
Allicdata Part #:

SS29HE3_A/H-ND

Manufacturer Part#:

SS29HE3_A/H

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 90V 1.5A DO214AA
More Detail: Diode Schottky 90V 1.5A Surface Mount DO-214AA (SM...
DataSheet: SS29HE3_A/H datasheetSS29HE3_A/H Datasheet/PDF
Quantity: 1000
3000 +: $ 0.12068
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: Automotive, AEC-Q100
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 30µA @ 90V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The SS29HE3_A/H is a type of Diode - Rectifiers - Single, which is commonly used in applications that require reliable performance and a high level of voltage and current conduction, as well as low forward voltage drop. It is an ideally suited device for rectifying high frequency AC signals in switchers, current controllers, inverters, solenoids, and lamps. Additionally, it is suitable for limiter circuits and switching applications involved in telecommunications.

The SS29HE3_A/H is a component composed of two terminals, an anode and a cathode, to which a current can be passed. It is a 3 Amp, surface mount 40V, Schottky Barrier (SBD) Rectifier Diodes. This component offers high surge capabilities and a low reverse leakage current, which provides outstanding reliability and efficient switching operations in medium frequency power supply applications.

Generally, the SS29HE3_A/H is a high temperature surface mount, single phase, stud mounted diode. As such, it is designed to be mounted directly to printed circuit boards and other substrates. It has an average forward current of 3 Amps, a forward voltage drop of 0.65V, and a reverse leakage current of 5.0V. It also has a high peak inverse voltage (PIV) of 40V and a junction temperature of 175°C.

The most important feature of the SS29HE3_A/H is its use of Schottky Barrier Technology, which allows conduction of current through the diode even when the voltage is low and the temperature is high. This increases its ability to handle higher currents than other diodes, as well as a low reverse leakage current. The device has a high power efficiency and a fast switching time - a key factor in determining the performance of an electronic device.

In operation, the SS29HE3_A/H works as a three-terminal unidirectional current path, which drops a predetermined amount of voltage when forward biased. The diode turns on when a positive voltage is applied to the anode and a negative voltage is applied to the cathode, allowing current to flow in a single direction. When the voltage applied to the anode and cathode is reversed, the diode becomes blocked and no current flows.

Furthermore, the SS29HE3_A/H is designed to provide protection against various types of external interference, including electrostatic discharge (ESD) and transients, which can cause damage to sensitive semiconductor components. This protection is ensured through various techniques, such as pre-regulator circuitry, construction with plastic encapsulation, and internal reverse blocking diodes.

In conclusion, the SS29HE3_A/H is an efficient and reliable single-phase Schottky-barrier rectifier diode that is ideal for switching and protection applications involving medium frequency power supply, switchers, current controllers, and inverters. It has a low forward voltage drop, a high peak inverse voltage, and a high power efficiency, making it an ideal device for a wide range of electronic devices. With its high surge capability and low reverse leakage current, it is the perfect choice for applications that require a high degree of reliability and a low risk of failure.

The specific data is subject to PDF, and the above content is for reference

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