SS2P3LHE3/85A Allicdata Electronics
Allicdata Part #:

SS2P3LHE3/85A-ND

Manufacturer Part#:

SS2P3LHE3/85A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 30V 2A DO220AA
More Detail: Diode Schottky 30V 2A Surface Mount DO-220AA (SMP)
DataSheet: SS2P3LHE3/85A datasheetSS2P3LHE3/85A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SS2P3
Description

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Diodes are semiconductor devices made out of a semiconductor material like silicon, germanium or gallium arsenide. They have two electrodes, an anode and a cathode, and can act as a rectifier by allowing current to flow in one direction only. Single diodes, as the name implies, contain only one diode in a package. Examples of single diodes are SS2P3LHE3/85A. This particular single diode can be used in a variety of applications, and its working principle will be discussed in this article.

The SS2P3LHE3/85A single diode is mainly used for rectification purposes. It has a maximum forward current of 125mA and maximum reverse voltage of 55V. It is made from a silicon material and has a low forward voltage drop of 0.22V at 100mA. Due to its small size, the SS2P3LHE3/85A is suitable for surface mounting and can be used in a wide range of applications including telecommunications, lighting and low voltage power supplies.

The working principle of the SS2P3LHE3/85A is based on the PN Junction diode. When a voltage is applied to the diode, the P-type material attracts the holes and the N-type material attracts the electrons. This forms a depletion region in the junction where the majority carriers are depleted and the resistance across the junction increases. This prevents the current from flowing in the reverse direction. In the forward direction, the voltage applied to the diode causes a current to flow across the junction and a voltage drop across the diode. For the SS2P3LHE3/85A, when the forward voltage exceeds 0.22V, the current will flow.

The SS2P3LHE3/85A can be used in several applications. The first application is to convert alternating current (AC) to direct current (DC). This process is known as rectification and is used in power supplies and motors. The SS2P3LHE3/85A can also be used for voltage clamping and voltage level shifting. Voltage clamping is used to limit the output voltage of a given circuit. On the other hand, voltage level shifting is used to change the input voltage of a circuit and is often used in audio devices.

The SS2P3LHE3/85A is also used in lighting applications. As its forward voltage drop is low, the SS2P3LHE3/85A is used in low voltage lighting systems such as those used in car parks and warehouses. It can be used along with other components such as transformers and regulators to create a reliable and cost-effective lighting system.

Finally, the SS2P3LHE3/85A can also be used in telecommunications. It is used in telephone lines, modems and other communication systems to convert the alternating current in the phone line to direct current and provide a protective voltage threshold. This ensures that signals are carried correctly and with minimal interference.

The SS2P3LHE3/85A single diode is a versatile component which can be used in a variety of applications. Its main purpose is to convert AC to DC, but it can also be used for voltage clamping, level shifting and lighting systems. The SS2P3LHE3/85A works on the principle of the PN Junction diode, where a voltage applied to the diode causes current to flow across the junction and a voltage drop across the diode.

The specific data is subject to PDF, and the above content is for reference

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