SS310LHRUG Allicdata Electronics
Allicdata Part #:

SS310LHRUG-ND

Manufacturer Part#:

SS310LHRUG

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE SCHOTTKY 100V 3A SUB SMA
More Detail: Diode Schottky 100V 3A Surface Mount Sub SMA
DataSheet: SS310LHRUG datasheetSS310LHRUG Datasheet/PDF
Quantity: 1000
21600 +: $ 0.06715
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes are one of the most important components of a circuit, and diodes made from silicon carbide (SiC) have recently been making waves in the semiconductor industry. The SS310LHRUG is a power DIAC (also known as a Rectifier or single-diode control rectifier) produced by Littelfuse, Inc. that is made from silicon carbide. As a DIAC, the SS310LHRUG is a current-controlled device that only allows current to flow in one direction and has numerous applications, including the regulation of power supplies and the protection of circuits in a variety of electronic devices. This guide will explain the SS310LHRUG’s application field and working principle.

Application Field

The SS310LHRUG offers a wide range of applications in a variety of electronic devices, due to its unique characteristics. Firstly, due to its high-temperature and high-voltage capabilities, the SS310LHRUG is the ideal choice for use in high-temperature applications and environments, such as automotive electronics. Secondly, the SS310LHRUG offers a fast switching frequency of up to 100 kHz, which makes it a good choice for high frequency circuit design. Additionally, the SS310LHRUG’s low dynamic and stray inductance makes it a perfect fit for telecom and computing applications. Finally, the SS310LHRUG also provides excellent ESD (electrostatic discharge) protection up to 10 kV, making it suitable for use in a diverse range of ruggedized devices and industrial equipment.

Working Principle

The SS310LHRUG is a voltage-controlled DIAC, which is designed to control the flow of current in one direction only. This is achieved by using two internal P-N junctions, which are connected by a control or “gate” contact. When a voltage is applied to the gate contact, electrons move from the P-type material to the N-type, forming a “population” of carriers which carry the current, thus allowing it to flow through the circuit. When the voltage drops below the lower breakdown voltage, the electrons stop moving, turning the population of carriers off and thus stopping the flow of current. This circuit is known as an “off-state”, and the population of carriers are known as “diode carriers”.

The SS310LHRUG is unique in that it is able to maintain the on-state resistance while switching between on and off states. This makes it significantly more efficient than traditional rectifers and diodes, as it is able to reduce power waste during switching. Furthermore, the SS310LHRUG is also able to switch quickly between on and off states, allowing it to remain in an on-state while being repeatedly tested. Finally, the SS310LHRUG is also able to handle large signals, and can handle up to 5A of load current and voltage up to 400V.

Conclusion

The SS310LHRUG is a single-diode control rectifier that is made from silicon carbide. The device is able to provide a range of applications, including surge protection and high-temperature use. The SS310LHRUG works using two internal P-N junctions, which are connected by a gate contact. When a voltage is applied, electrons move from the P-type material to the N-type, forming a population of carriers that carry the current. This process is able to occur quickly while maintaining the on-state resistance, allowing the device to be used efficiently in high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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