Allicdata Part #: | SS36LRTG-ND |
Manufacturer Part#: |
SS36L RTG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 60V 3A SUB SMA |
More Detail: | Diode Schottky 60V 3A Surface Mount Sub SMA |
DataSheet: | SS36L RTG Datasheet/PDF |
Quantity: | 1000 |
22500 +: | $ 0.05755 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 750mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 60V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A single rectifier (SR) module is a type of semiconductor device that works as a half-wave rectifier for high power applications. It is usually a four-terminal device comprising two anode, two cathode and two output terminals. Its primary purpose is to reduce switching losses and reduce power consumption in AC power rectification.
Schottky barrier Rectifier Technology 36L (SS36L RTG) is a single rectifier module developed by Diodes Inc. It is based on a Schottky diode, which is a type of power semiconductor device. This technology employs an ultra-thin Schottky barrier layer which allows current to pass through quickly and with low resistance. It also reduces the effect of undesirable interelectrode capacitance.
The SS36L RTG module is ideal for a wide range of power applications, such as industrial, automotive, telecommunications and LED lighting. It can handle up to 150A continuous current, and has a maximum peak repetitive reverse voltage of 600V. In addition, its low forward voltage drop of 1.3V allows for improved efficiency of power devices and low power loss.
The working principle of the SS36L RTG rectifier module is based on the Schottky Barrier Diode (SBD) which can handle a high operating temperature of up to 200°C. A thin layer of metal is applied over the anode and cathode contacts to form an energized barrier which allows an electric current to pass through. The voltage drop of the diode is determined by the barrier height and the energy band gap of the material in the junction.
The SS36L RTG rectifier module offers many advantages such as a low forward voltage drop, low power loss, high current carrying capacity and a high degree of thermal performance. In addition, it offers improved efficiency of power devices and reduced power dissipation in power conversion applications. Moreover, the module has superior noise immunity and EMI, making it suitable for high-integrity applications.
In sum, the SS36L RTG rectifier module is an effective, high-performance and reliable solution for DC power applications. Its low forward voltage drop, high current carrying capacity and superior noise immunity make it ideal for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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