SS3H10HE3/57T

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The SS3H10HE3/57T is a single phase, fast recover rectifier diode. It\'s designed for use in high frequency switched mode power supplies, DC to DC converters and inverters. This device also can be used in photovoltaic inverters for maximum efficiency and energy savings. The SS3H10HE3/57T has a low forward voltage drop and a low leakage current for improved efficiency. It also has a high temperature stability of up to 150°C with minimal thermal loss.

The SS3H10HE3/57T is designed to provide high current surge capability and low forward drop. Its high surge capability maximizes rectifier efficiency while its low forward drop helps reduce power loss in a wide range of applications. It also has an ultra low leakage current which allows for greater efficiency in high power applications. The diode also has low reverse recovery time, which helps reduce switching losses in power supplies, inverters and other switching applications.

The SS3H10HE3/57T is fabricated with a N-channel and planar Schottky barrier diode. The diode is configured as a bridge rectifier with two phases and a voltage rating of 600V. It has a 3A forward current rating and can handle up to 1,000A current surge. It has a fast reverse recovery time of <50ns and a typical reverse leakage current of 5µA at 25°C.

The working principle of the SS3H10HE3/57T is simple. When the positive and negative voltages are applied to the diode, the anode will become positively charged and the cathode will become negatively charged. This sets up a potential barrier in the middle of the diode and cause the current to flow in a one-way direction through the diode. This one-way flow of current, which is known as rectification, allows the required electrical current to be delivered to the device in a controlled manner.

The SS3H10HE3/57T is a fast, efficient, and reliable rectifier diode. It is well suited for a wide range of applications including synchronous buck, photovoltaic inverters, and telecom power supplies. Its high surge capability and low forward drop help maximize efficiency while the low reverse recovery time minimizes switching losses. The diode also has an ultra low leakage current allowing it to be used in high power applications. With its high temperature stability, the SS3H10HE3/57T is an ideal choice for high current applications in harsh environments.

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